doc. Ing.

Miroslav Kolíbal

Ph.D.

FME, IPE – associate professor

+420 54114 2813
kolibal.m@fme.vutbr.cz

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doc. Ing. Miroslav Kolíbal, Ph.D.

Publications

  • 2020

    WANG, T.; SHI, Y.; PUGLISI, F. M.; CHEN, S.; ZHU, K.; ZOU, Y.; LI, X.; JING, X.; HAN, T.; GUO, B.; BUKVIŠOVÁ, K.; KACHTÍK, L.; KOLÍBAL, M.; WEN, CH.; LANZA, M. Electroforming in Metal-Oxide Memristive Synapses. ACS applied materials & interfaces, 2020, vol. 12, no. 10, p. 11806-11814. ISSN: 1944-8252.
    Detail | WWW

  • 2019

    KOLÍBAL, M.; BUKVIŠOVÁ, K.; KACHTÍK, L.; ZAK, A.; NOVÁK, L.; ŠIKOLA, T. Formation of Tungsten Oxide Nanowires by Electron-Beam-Enhanced Oxidation of WS2 Nanotubes and Platelets. Journal of Physical Chemistry C (print), 2019, vol. 123, no. 14, p. 9552-9559. ISSN: 1932-7447.
    Detail | WWW

    NOVÁK, T.; KOSTELNÍK, P.; KONEČNÝ, M.; ČECHAL, J.; KOLÍBAL, M.; ŠIKOLA, T. Temperature effect on Al predose and AlN nucleation affecting the buffer layer performance for the GaN-on-Si based high-voltage devices. Japanese Journal of Applied Physics, 2019, vol. 58, no. SC, p. SC1018-1 (SC1018-9 p.)ISSN: 0021-4922.
    Detail | WWW

  • 2018

    KOLÍBAL, M.; PEJCHAL, T.; MUSÁLEK, T.; ŠIKOLA, T. Catalyst–substrate interaction and growth delay in vapor–liquid–solid nanowire growth. NANOTECHNOLOGY, 2018, vol. 29, no. 20, p. 1-7. ISSN: 0957-4484.
    Detail | WWW | Full text in the Digital Library

  • 2017

    JIANG, L.; XIAO, N.; WANG, B.; GRUSTAN-GUTIERREZ, E.; JING, X.; BÁBOR, P.; KOLÍBAL, M.; LU, G.; WU, T.; WANG, H.; HUI, F.; SHI, Y.; SONG, B.; XIE, X.; LANZA, M. High- resolution characterization of hexagonal boron nitride coatings exposed to aqueous and air oxidative environments. Nano Research, 2017, vol. 10, no. 6, p. 2046-2055. ISSN: 1998-0000.
    Detail

  • 2016

    KOLÍBAL, M.; NOVÁK, L.; SHANLEY, T.; TOTH, M.; ŠIKOLA, T. Silicon oxide nanowire growth mechanisms revealed by real-time electron microscopy. NANOSCALE, 2016, vol. 8, no. 1, p. 266-275. ISSN: 2040-3364.
    Detail | WWW

    KOLÍBAL, M.; PEJCHAL, T.; VYSTAVĚL, T.; ŠIKOLA, T. The Synergic Effect of Atomic Hydrogen Adsorption and Catalyst Spreading on Ge Nanowire Growth Orientation and Kinking. NANO LETTERS, 2016, vol. 16, no. 8, p. 4880-4886. ISSN: 1530-6984.
    Detail

    DVOŘÁK, P.; KOLÍBAL, M.; SPOUSTA, J.; ŠIKOLA, T. Fotoluminiscence h- BN detekována pomocí rastrovací optické mikroskopie v blízkém poli. Jemná mechanika a optika, 2016, vol. 61, no. 6, p. 149-150. ISSN: 0447-6441.
    Detail

    ELBADAWI, C.; TRAN, T.; KOLÍBAL, M.; ŠIKOLA, T.; SCOTT, J.; CAI, Q.; LI, L.; TANIGUCHI, T.; WATANABE, K.; TOTH, M.; AHARONOVICH, I.; LOBO, C. Electron beam directed etching of hexagonal boron nitride. Nanoscale, 2016, vol. 8, no. 36, p. 16182-16186. ISSN: 2040-3372.
    Detail

  • 2014

    KOLÍBAL, M.; VYSTAVĚL, T.; VARGA, P.; ŠIKOLA, T. Real-Time Observation of Collector Droplet Oscillations during Growth of Straight Nanowires. NANO LETTERS, 2014, vol. 14, no. 2, p. 1756-1761. ISSN: 1530-6984.
    Detail

    GLAJC, P.; ZLÁMAL, J.; MACH, J.; KOLÍBAL, M.; ŠIKOLA, T. Návrh iontového zdroje se sedlovým polem a žhavenou katodou. Jemná mechanika a optika, 2014, vol. 59, no. 6- 7, p. 181-183. ISSN: 0447- 6441.
    Detail

    MACH, J.; ŠAMOŘIL, T.; KOLÍBAL, M.; ZLÁMAL, J.; VOBORNÝ, S.; BARTOŠÍK, M.; ŠIKOLA, T. Optimization of ion-atomic beam source for deposition of GaN ultrathin films. Review of Scientific Instruments, 2014, vol. 85, no. 8, p. 083302-1 (083302-5 p.)ISSN: 0034-6748.
    Detail

    LIGMAJER, F.; DRUCKMÜLLEROVÁ, Z.; MĚCH, R.; KOLÍBAL, M.; ŠIKOLA, T. Tvorba uspořádaných souborů kovových nanočástic na polovodičových substrátech a jejich charakterizace pomocí spektroskopické elipsometrie. Jemná mechanika a optika, 2014, vol. 59, no. 6- 7, p. 178-180. ISSN: 0447- 6441.
    Detail

    DRUCKMÜLLEROVÁ, Z.; KOLÍBAL, M.; VYSTAVĚL, T.; ŠIKOLA, T. Toward Site-Specific Dopant Contrast in Scanning Electron Microscopy. MICROSCOPY AND MICROANALYSIS, 2014, vol. 20, no. 4, p. 1312-1317. ISSN: 1431-9276.
    Detail

  • 2012

    KOLÍBAL, M.; KONEČNÝ, M.; LIGMAJER, F.; ŠKODA, D.; VYSTAVĚL, T.; ZLÁMAL, J.; VARGA, P.; ŠIKOLA, T. Guided Assembly of Gold Colloidal Nanoparticles on Silicon Substrates Prepatterned by Charged Particle Beams. ACS Nano, 2012, vol. 6, no. 11, p. 10098-10106. ISSN: 1936- 0851.
    Detail

    KOLÍBAL, M.; KALOUSEK, R.; NOVÁK, L.; VYSTAVĚL, T.; ŠIKOLA, T. Controlled faceting in (110) germanium nanowire growth by switching between vapor-liquid-solid and vapor-solid- solid growth. Applied Physics Letters, 2012, vol. 100, no. 20, p. 203102- 1 (203102-4 p.)ISSN: 0003- 6951.
    Detail

  • 2011

    KOLÍBAL, M.; MATLOCHA, T.; VYSTAVĚL, T.; ŠIKOLA, T. Low energy focused ion beam milling of silicon and germanium nanostructures. NANOTECHNOLOGY, 2011, vol. 22, no. 10, p. 105304- 1 (105304-8 p.)ISSN: 0957-4484.
    Detail

    KOLÍBAL, M.; VYSTAVĚL, T.; NOVÁK, L.; MACH, J.; ŠIKOLA, T. In-situ observation of <110> oriented Ge nanowire growth and associated collector droplet behavior. Applied Physics Letters, 2011, vol. 99, no. 14, p. 143113- 1 (143113-3 p.)ISSN: 0003- 6951.
    Detail

    MACH, J.; ŠAMOŘIL, T.; VOBORNÝ, S.; KOLÍBAL, M.; ZLÁMAL, J.; SPOUSTA, J.; DITTRICHOVÁ, L.; ŠIKOLA, T. An ultra-low energy (30–200 eV) ion-atomic beam source for ion-beam- assisted deposition in ultrahigh vacuum. Review of Scientific Instruments, 2011, vol. 82, no. 8, p. 083302- 1 (083302-7 p.)ISSN: 0034- 6748.
    Detail

    BÁBOR, P.; DUDA, R.; PRŮŠA, S.; MATLOCHA, T.; KOLÍBAL, M.; ČECHAL, J.; URBÁNEK, M.; ŠIKOLA, T. Depth resolution enhancement by combined DSIMS and TOF- LEIS profiling. Nuclear Instruments and Methods in Physics Research B, 2011, vol. 269, no. 3, p. 369-373. ISSN: 0168- 583X.
    Detail

  • 2010

    KOLÍBAL, M.; ČECHAL, J.; BARTOŠÍK, M.; MACH, J.; ŠIKOLA, T. Stability of hydrogen- terminated silicon surface under ambient atmosphere. Applied Surface Science, 2010, vol. 256, no. 11, p. 3423-2426. ISSN: 0169- 4332.
    Detail

    MATLOCHA, T.; PRŮŠA, S.; KOLÍBAL, M.; BÁBOR, P.; PRIMETZHOFER, D.; MARKIN, S.; BAUER, P.; ŠIKOLA, T. A study of a LEIS azimuthal scan behavior: Classical dynamics simulation. Surface Science, 2010, vol. 604, no. 21- 22, p. 1906-1911. ISSN: 0039- 6028.
    Detail

    ČECHAL, J.; POLČÁK, J.; KOLÍBAL, M.; BÁBOR, P.; ŠIKOLA, T. Formation of copper islands on a native SiO2 surface at elevated temperatures. Applied Surface Science, 2010, vol. 256, no. 11, p. 3636-3641. ISSN: 0169- 4332.
    Detail

  • 2009

    BÁBOR, P.; DUDA, R.; PRŮŠA, S.; MATLOCHA, T.; KOLÍBAL, M.; KALOUSEK, R.; NEUMAN, J.; URBÁNEK, M.; ŠIKOLA, T. Mechanika iontů jako prostředek k analýze nanosvěta. Jemná mechanika a optika, 2009, vol. 54, no. 7- 8, p. 209-214. ISSN: 0447- 6441.
    Detail

    ČECHAL, J.; TOMANEC, O.; ŠKODA, D.; KOŇÁKOVÁ, K.; HRNČÍŘ, T.; MACH, J.; KOLÍBAL, M.; ŠIKOLA, T. Selective growth of Co islands on ion beam induced nucleation centers in a native SiO2 film. Journal of Aplied Physics, 2009, vol. 105, no. 8, p. 084314-1 (084314-6 p.)ISSN: 0021-8979.
    Detail

    ČECHAL, J.; MATLOCHA, T.; POLČÁK, J.; KOLÍBAL, M.; TOMANEC, O.; KALOUSEK, R.; DUB, P.; ŠIKOLA, T. Characterization of oxidized gallium droplets on silicon surface: an ellipsoidal droplet shape model for angle resolved X- ray photoelectron spectroscopy analysis. Thin Solid Films, 2009, vol. 517, no. 6, p. 1928-1934. ISSN: 0040- 6090.
    Detail

    BARTOŠÍK, M.; KOLÍBAL, M.; ČECHAL, J.; MACH, J.; ŠIKOLA, T. Selective growth of metallic nanostructures on surfaces patterned by AFM local anodic oxidation. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2009, vol. 9, no. 10, p. 5887-5890. ISSN: 1533- 4880.
    Detail

  • 2008

    KOLÍBAL, M.; ČECHAL, T.; KOLÍBALOVÁ, E.; ČECHAL, J.; ŠIKOLA, T. Self-limiting cyclic growth of gallium droplets on Si(111). NANOTECHNOLOGY, 2008, vol. 19, no. 46, p. 475606- 1 (475606-5 p.)ISSN: 0957-4484.
    Detail

    MACH, J.; ČECHAL, J.; KOLÍBAL, M.; POTOČEK, M.; ŠIKOLA, T. Atomic hydrogen induced gallium nanocluster formation on the Si(100) surface. Surface Science, 2008, vol. 602, no. 10, p. 1898-1902. ISSN: 0039- 6028.
    Detail

    PRIMETZHOFER, D.; MARKIN, S.; ZEPPENFELD, P.; BAUER, P.; PRŮŠA, S.; KOLÍBAL, M.; ŠIKOLA, T. Quantitative analysis of ultra thin layer growth by time-of- flight low energy ion scattering. Applied Physics Letters, 2008, vol. 92, no. 1, p. 011929- 1 (011929-3 p.)ISSN: 0003-6951.
    Detail

  • 2007

    KOLÍBAL, M.; TOMANEC, O.; PRŮŠA, S.; PLOJHAR, M.; MARKIN, S.; DITTRICHOVÁ, L.; SPOUSTA, J.; BAUER, P.; ŠIKOLA, T. TOF-LEIS spectra of Ga/Si: Peak shape analysis. Nuclear Instruments and Methods in Physics Research B, 2007, vol. 265, no. 2, p. 569-575. ISSN: 0168- 583X.
    Detail

    PRŮŠA, S.; KOLÍBAL, M.; BÁBOR, P.; MACH, J.; ŠIKOLA, T. Analysis of thin films by TOF- LEIS. ACTA PHYSICA POLONICA A, 2007, vol. 111, no. 3, p. 335-341. ISSN: 0587- 4246.
    Detail

    ČECHAL, J.; KOLÍBAL, M.; KOSTELNÍK, P.; ŠIKOLA, T. Gallium structure on the Si(111)-(7 x 7) surface: influence of Ga coverage and temperature. Journal of Physics: Condensed Matter, 2007, vol. 19, no. 1, p. 016011 ( p.)ISSN: 0953- 8984.
    Detail

  • 2006

    KOLÍBAL, M.; PRŮŠA, S.; PLOJHAR, M.; BÁBOR, P.; POTOČEK, M.; TOMANEC, O.; KOSTELNÍK, P.; MARKIN, S.; BAUER, P.; ŠIKOLA, T. In situ Analysis of Ga-ultra Thin Films by ToF- LEIS. Nuclear Instruments and Methods in Physics Research B, 2006, vol. 249, no. 1- 2, p. 318-321. ISSN: 0168- 583X.
    Detail

  • 2005

    KOLÍBAL, M.; PRŮŠA, S.; PLOJHAR, M.; BÁBOR, P.; POTOČEK, M.; TOMANEC, O.; MARKIN, S.; BAUER, P.; ŠIKOLA, T. In situ Analysis of Ga-ultra Thin Films by TOF- LEIS. 1. Seville: 2005.
    Detail

    KOLÍBAL, M.; PRŮŠA, S.; TOMANEC, O.; POTOČEK, M.; ČECHAL, J.; KOSTELNÍK, P.; PLOJHAR, M.; BÁBOR, P.; SPOUSTA, J.; MARKIN, S.; BAUER, P.; ŠIKOLA, T. Application of ToF LEIS for Monitoring the growth and thermal treatment of Ga ultrathin films. 1. Vienna: 2005. p. 191-191.
    Detail

    DRAXLER, M.; MARKIN, S.; KOLÍBAL, M.; PRŮŠA, S.; ŠIKOLA, T.; BAUER, P. High resolution time-of- flight low energy ion scattering. Nuclear Instruments and Methods in Physics Research B, 2005, vol. 230, no. 0, p. 398-401. ISSN: 0168- 583X.
    Detail

  • 2004

    KOLÍBAL, M.; PRŮŠA, S.; BÁBOR, P.; ŠIKOLA, T. ToF-LEIS Analysis of ultra thin films: Ga and Ga-N layer growth on Si(111). Surface Science, 2004, vol. 566- 568, no. 9, p. 885 ( p.)ISSN: 0039- 6028.
    Detail

    VOBORNÝ, S.; KOLÍBAL, M.; MACH, J.; ČECHAL, J.; BÁBOR, P.; PRŮŠA, S.; SPOUSTA, J.; ŠIKOLA, T. Deposition and in-situ charakterization of ultra- thin films. Thin Solid Films, 2004, vol. 459, no. 1- 2, p. 17 ( p.)ISSN: 0040- 6090.
    Detail

    KOLÍBAL, M.; PRŮŠA, S.; BÁBOR, P.; ŠIKOLA, T. Low energy ion scattering as a method for surface structure analysis. Jemná mechanika a optika, 2004, vol. 9, no. 9, p. 262 ( p.)ISSN: 0447- 6441.
    Detail

    KOLÍBAL, M., PRŮŠA, S., BÁBOR, P., BARTOŠÍK, M., TOMANEC, O., ŠIKOLA, T. Growth of gallium on sillicon: A TOF- LEIS and AFM study. In New Trend in Physics. Brno: VUT v Brně, 2004. p. 230 ( p.)ISBN: 80-7355-024- 5.
    Detail

    VOBORNÝ, S., MACH, J., KOLÍBAL, M., ČECHAL, J., BÁBOR, P., POTOČEK, M., ŠIKOLA, T. A study of Early Periods of GaN Ultrathin Film Growth. In New Trends in Pysics. Brno: VUT v Brně, 2004. p. 270 ( p.)ISBN: 80-7355-024- 5.
    Detail

  • 2003

    KOLÍBAL, M., PRŮŠA, S., BÁBOR, P., BAUER, P., ŠIKOLA, T. TOF-LEIS analysis of ultra thin films: Ga- and Ga-N layer growth on Si (111). In ECOSS 22 CD. Praha: FÚ AV ČR, 2003. p. 0 ( p.)
    Detail

    PRŮŠA, S., KOLÍBAL, M., BÁBOR, P., MACH, J., JURKOVIČ, P., ŠIKOLA, T. Analysis of thin films by TOF LEIS. In EVC' 03 Abstracts. Berlin: EVC, 2003. p. 133 ( p.)
    Detail

    VOBORNÝ, S., KOLÍBAL, M., MACH, J., ČECHAL, J., BÁBOR, P., PRŮŠA, S., SPOUSTA, J., ŠIKOLA, T. Deposition and in situ characterization of ultra- thin films. In EVC' 03 Abstracts. Berlin: EVC, 2003. p. 45 ( p.)
    Detail

    BÁBOR, P., KOLÍBAL, M., PRŮŠA, S., ŠIKOLA, T. Application of a simple imaging system in SIMS and TOF LEIS. In ECOSS 22 CD. Praha: FÚ AV ČR, 2003. p. 0 ( p.)
    Detail

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