Publication detail

Quantitative analysis of ultra thin layer growth by time-of-flight low energy ion scattering

PRIMETZHOFER, D. MARKIN, S. ZEPPENFELD, P. BAUER, P. PRŮŠA, S. KOLÍBAL, M. ŠIKOLA, T.

Original Title

Quantitative analysis of ultra thin layer growth by time-of-flight low energy ion scattering

Type

journal article - other

Language

English

Original Abstract

Time of flight low energy ion scattering is used to quantitatively characterize the growth mode of Au deposited on B. Information on the filling factor (surface area coverage) is deduced from the yield of backscattered ions and the spectrum height of scattered neutrals. From the variation of the filling factor with the nominal Au thickness, cluster growth is deduced. Information on the average cluster height is obtained from the energy distribution of scattered neutrals and the comparison with computer simulation. Finally, an estimate of the aspect ratios is obtained for the clusters from the filling factor and the cluster height.

Keywords

Low energy ion scattering, LEIS; Time-of-flight, ToF; Quantitative analysis

Authors

PRIMETZHOFER, D.; MARKIN, S.; ZEPPENFELD, P.; BAUER, P.; PRŮŠA, S.; KOLÍBAL, M.; ŠIKOLA, T.

RIV year

2008

Released

11. 1. 2008

ISBN

0003-6951

Periodical

Applied Physics Letters

Year of study

92

Number

1

State

United States of America

Pages from

011929-1

Pages to

011929-3

Pages count

3