Detail publikace
SiGe Technology
Originální název
SiGe Technology
Anglický název
SiGe Technology
Jazyk
en
Originální abstrakt
This paper reviews the recent progress in both SiGe heterojunction bipolar (HBT) technology and SiGe field effect transistor (FET) technology.
Anglický abstrakt
This paper reviews the recent progress in both SiGe heterojunction bipolar (HBT) technology and SiGe field effect transistor (FET) technology.
BibTex
@inproceedings{BUT4065,
author="Zdeněk {Bartoň} and Vladislav {Musil}",
title="SiGe Technology",
annote="This paper reviews the recent progress in both SiGe heterojunction bipolar (HBT) technology and SiGe field effect transistor (FET) technology.",
address="Ing. Zdeněk Novotný, CSc.",
booktitle="Socrates Workshop 2001. Intensive Training Programme in Electronic System Design. Proceedings",
chapter="4065",
institution="Ing. Zdeněk Novotný, CSc.",
year="2001",
month="september",
pages="302",
publisher="Ing. Zdeněk Novotný, CSc.",
type="conference paper"
}