Detail publikace

SiGe Technology

BARTOŇ, Z., MUSIL, V.

Originální název

SiGe Technology

Anglický název

SiGe Technology

Jazyk

en

Originální abstrakt

This paper reviews the recent progress in both SiGe heterojunction bipolar (HBT) technology and SiGe field effect transistor (FET) technology.

Anglický abstrakt

This paper reviews the recent progress in both SiGe heterojunction bipolar (HBT) technology and SiGe field effect transistor (FET) technology.

Dokumenty

BibTex 


@inproceedings{BUT4065,
  author="Zdeněk {Bartoň} and Vladislav {Musil}",
  title="SiGe Technology",
  annote="This paper reviews the recent progress in both SiGe heterojunction bipolar (HBT) technology and SiGe field effect transistor (FET) technology.",
  address="Ing. Zdeněk Novotný, CSc.",
  booktitle="Socrates Workshop 2001. Intensive Training Programme in Electronic System Design. Proceedings",
  chapter="4065",
  institution="Ing. Zdeněk Novotný, CSc.",
  year="2001",
  month="september",
  pages="302",
  publisher="Ing. Zdeněk Novotný, CSc.",
  type="conference paper"
}