Publication detail

SiGe Technology

BARTOŇ, Z., MUSIL, V.

Original Title

SiGe Technology

English Title

SiGe Technology

Type

conference paper

Language

en

Original Abstract

This paper reviews the recent progress in both SiGe heterojunction bipolar (HBT) technology and SiGe field effect transistor (FET) technology.

English abstract

This paper reviews the recent progress in both SiGe heterojunction bipolar (HBT) technology and SiGe field effect transistor (FET) technology.

RIV year

2001

Released

02.09.2001

Publisher

Ing. Zdeněk Novotný, CSc.

Location

Brno

ISBN

80-214-2027-8

Book

Socrates Workshop 2001. Intensive Training Programme in Electronic System Design. Proceedings

Pages from

302

Pages to

316

Pages count

15

BibTex


@inproceedings{BUT4065,
  author="Zdeněk {Bartoň} and Vladislav {Musil}",
  title="SiGe Technology",
  annote="This paper reviews the recent progress in both SiGe heterojunction bipolar (HBT) technology and SiGe field effect transistor (FET) technology.",
  address="Ing. Zdeněk Novotný, CSc.",
  booktitle="Socrates Workshop 2001. Intensive Training Programme in Electronic System Design. Proceedings",
  chapter="4065",
  institution="Ing. Zdeněk Novotný, CSc.",
  year="2001",
  month="september",
  pages="302",
  publisher="Ing. Zdeněk Novotný, CSc.",
  type="conference paper"
}