Publication detail

Near field scanning optical microscopy as an imaging tool for carrier process in silicon

BENEŠOVÁ, M., TOMÁNEK, P., OTEVŘELOVÁ, D., DOBIS, P., GRMELA, L.

Original Title

Near field scanning optical microscopy as an imaging tool for carrier process in silicon

Czech Title

Rastrovací optická mikroskopie v blízkém poli jako nástroj pro zobrazení nábojů v křemíku

English Title

Near field scanning optical microscopy as an imaging tool for carrier process in silicon

Type

conference paper

Language

en

Original Abstract

Characteristic time variations of carrier processes, such as the recombination of excess carriers, of oxidized silicon are measured as a function of position using near-field scanning optical microscopy (NSOM). Typical time constants from the region imaged agree well with those obtained by conventional spatial-averaging techniques for a wide range of samples. Images locate defects, reveal variations, and can map the regions in which a particular recombination process is active. The technique will be reviewed including the limits of resolution and signal strength, with illustrations from a variety of samples. Carrier diffusion in confined layers, such as SOI samples, will be discussed.

Czech abstract

Charakteristické změny doby procesů s náboji jako jsou rekombinace nadbytečného náboje z oxidované vrstvy křemíku jsou meřeny pomocí SNOM. Typické konstanty jsou porovnávány s výsledky metod prostorového průměrování. Difuze náboje na vzorcích SOI je také diskutována.

English abstract

Characteristic time variations of carrier processes, such as the recombination of excess carriers, of oxidized silicon are measured as a function of position using near-field scanning optical microscopy (NSOM). Typical time constants from the region imaged agree well with those obtained by conventional spatial-averaging techniques for a wide range of samples. Images locate defects, reveal variations, and can map the regions in which a particular recombination process is active. The technique will be reviewed including the limits of resolution and signal strength, with illustrations from a variety of samples. Carrier diffusion in confined layers, such as SOI samples, will be discussed.

Keywords

excess carrier lifetime, recombination, dynamics, near-field scanning optical microscopy, local measurement, superresolution

RIV year

2003

Released

01.06.2003

Publisher

Process Engineering Publisher

Location

Praha

ISBN

80-86059-35-9

Book

Advanced engineering design

Pages from

F1.3

Pages to

F1.7

Pages count

5

BibTex


@inproceedings{BUT7632,
  author="Markéta {Benešová} and Pavel {Tománek} and Dana {Otevřelová} and Pavel {Dobis} and Lubomír {Grmela}",
  title="Near field scanning optical microscopy as an imaging tool for carrier process in silicon",
  annote="Characteristic time variations of carrier processes, such as the recombination of excess carriers, of oxidized silicon are measured as a function of position using near-field scanning optical microscopy (NSOM). Typical time constants from the region imaged agree well with those obtained by conventional spatial-averaging techniques for a wide range of samples. Images locate defects, reveal variations, and can map the regions in which a particular recombination process is active. The technique will be reviewed including the limits of resolution and signal strength, with illustrations from a variety of samples. Carrier diffusion in confined layers, such as SOI samples, will be discussed.",
  address="Process Engineering Publisher",
  booktitle="Advanced engineering design",
  chapter="7632",
  howpublished="print",
  institution="Process Engineering Publisher",
  year="2003",
  month="june",
  pages="F1.3--F1.7",
  publisher="Process Engineering Publisher",
  type="conference paper"
}