Detail publikace

Near field scanning optical microscopy as an imaging tool for carrier process in silicon

Originální název

Near field scanning optical microscopy as an imaging tool for carrier process in silicon

Anglický název

Near field scanning optical microscopy as an imaging tool for carrier process in silicon

Jazyk

en

Originální abstrakt

Characteristic time variations of carrier processes, such as the recombination of excess carriers, of oxidized silicon are measured as a function of position using near-field scanning optical microscopy (NSOM). Typical time constants from the region imaged agree well with those obtained by conventional spatial-averaging techniques for a wide range of samples. Images locate defects, reveal variations, and can map the regions in which a particular recombination process is active. The technique will be reviewed including the limits of resolution and signal strength, with illustrations from a variety of samples. Carrier diffusion in confined layers, such as SOI samples, will be discussed.

Anglický abstrakt

Characteristic time variations of carrier processes, such as the recombination of excess carriers, of oxidized silicon are measured as a function of position using near-field scanning optical microscopy (NSOM). Typical time constants from the region imaged agree well with those obtained by conventional spatial-averaging techniques for a wide range of samples. Images locate defects, reveal variations, and can map the regions in which a particular recombination process is active. The technique will be reviewed including the limits of resolution and signal strength, with illustrations from a variety of samples. Carrier diffusion in confined layers, such as SOI samples, will be discussed.

BibTex


@inproceedings{BUT7632,
  author="Markéta {Benešová} and Pavel {Tománek} and Dana {Otevřelová} and Pavel {Dobis} and Lubomír {Grmela}",
  title="Near field scanning optical microscopy as an imaging tool for carrier process in silicon",
  annote="Characteristic time variations of carrier processes, such as the recombination of excess carriers, of oxidized silicon are measured as a function of position using near-field scanning optical microscopy (NSOM). Typical time constants from the region imaged agree well with those obtained by conventional spatial-averaging techniques for a wide range of samples. Images locate defects, reveal variations, and can map the regions in which a particular recombination process is active. The technique will be reviewed including the limits of resolution and signal strength, with illustrations from a variety of samples. Carrier diffusion in confined layers, such as SOI samples, will be discussed.",
  address="Process Engineering Publisher",
  booktitle="Advanced engineering design",
  chapter="7632",
  howpublished="print",
  institution="Process Engineering Publisher",
  year="2003",
  month="june",
  pages="F1.3--F1.7",
  publisher="Process Engineering Publisher",
  type="conference paper"
}