Detail publikace

Rastrovací optická mikroskopie v blízkém poli jako nástroj pro zobrazení nábojů v křemíku

BENEŠOVÁ, M., TOMÁNEK, P., OTEVŘELOVÁ, D., DOBIS, P., GRMELA, L.

Originální název

Near field scanning optical microscopy as an imaging tool for carrier process in silicon

Český název

Rastrovací optická mikroskopie v blízkém poli jako nástroj pro zobrazení nábojů v křemíku

Anglický název

Near field scanning optical microscopy as an imaging tool for carrier process in silicon

Typ

článek ve sborníku

Jazyk

en

Originální abstrakt

Characteristic time variations of carrier processes, such as the recombination of excess carriers, of oxidized silicon are measured as a function of position using near-field scanning optical microscopy (NSOM). Typical time constants from the region imaged agree well with those obtained by conventional spatial-averaging techniques for a wide range of samples. Images locate defects, reveal variations, and can map the regions in which a particular recombination process is active. The technique will be reviewed including the limits of resolution and signal strength, with illustrations from a variety of samples. Carrier diffusion in confined layers, such as SOI samples, will be discussed.

Český abstrakt

Charakteristické změny doby procesů s náboji jako jsou rekombinace nadbytečného náboje z oxidované vrstvy křemíku jsou meřeny pomocí SNOM. Typické konstanty jsou porovnávány s výsledky metod prostorového průměrování. Difuze náboje na vzorcích SOI je také diskutována.

Anglický abstrakt

Characteristic time variations of carrier processes, such as the recombination of excess carriers, of oxidized silicon are measured as a function of position using near-field scanning optical microscopy (NSOM). Typical time constants from the region imaged agree well with those obtained by conventional spatial-averaging techniques for a wide range of samples. Images locate defects, reveal variations, and can map the regions in which a particular recombination process is active. The technique will be reviewed including the limits of resolution and signal strength, with illustrations from a variety of samples. Carrier diffusion in confined layers, such as SOI samples, will be discussed.

Rok RIV

2003

Vydáno

01.06.2003

Nakladatel

Process Engineering Publisher

Místo

Praha

ISBN

80-86059-35-9

Kniha

Advanced engineering design

Strany od

F1.3

Strany do

F1.7

Strany počet

5

BibTex


@inproceedings{BUT7632,
  author="Markéta {Benešová} and Pavel {Tománek} and Dana {Otevřelová} and Pavel {Dobis} and Lubomír {Grmela}",
  title="Near field scanning optical microscopy as an imaging tool for carrier process in silicon",
  annote="Characteristic time variations of carrier processes, such as the recombination of excess carriers, of oxidized silicon are measured as a function of position using near-field scanning optical microscopy (NSOM). Typical time constants from the region imaged agree well with those obtained by conventional spatial-averaging techniques for a wide range of samples. Images locate defects, reveal variations, and can map the regions in which a particular recombination process is active. The technique will be reviewed including the limits of resolution and signal strength, with illustrations from a variety of samples. Carrier diffusion in confined layers, such as SOI samples, will be discussed.",
  address="Process Engineering Publisher",
  booktitle="Advanced engineering design",
  chapter="7632",
  howpublished="print",
  institution="Process Engineering Publisher",
  year="2003",
  month="june",
  pages="F1.3--F1.7",
  publisher="Process Engineering Publisher",
  type="conference paper"
}