Publication detail

Measurement of local photoluminescence and optically induced photocurrent in semiconductor structures

BENEŠOVÁ, M., DOBIS, P., TOMÁNEK, P., BRÜSTLOVÁ, J.

Original Title

Measurement of local photoluminescence and optically induced photocurrent in semiconductor structures

Type

conference paper

Language

English

Original Abstract

Near-field local Photoluminescence (PL) and photocurrent (PC) spectroscopic techniques are used to study of semiconductor quantum structures using a technique of reflection Scanning Near-field Optical Microscope (r-SNOM) in combination with Nitrogen laser and tuning dye laser. r-SNOM employs an uncoated and/or Au-metallized single-mode fiber tip both as nanosource and a nanoprobe. Due to the high lateral resolution of the microscope, it is possible to locate e.g. defects in a multiple quantum well grown by molecular beam epitaxy. Near-field characteristics of measured quantities are also discussed.

Keywords

near field, photoluminescence, induced photocurrent, semiconductor structures, local measurement

Authors

BENEŠOVÁ, M., DOBIS, P., TOMÁNEK, P., BRÜSTLOVÁ, J.

RIV year

2002

Released

26. 5. 2002

Publisher

Tech-Market,Praha

Location

Praha

ISBN

80-86114-46-5

Book

Photonics Prague 2002

Pages from

146

Pages to

146

Pages count

1

BibTex

@inproceedings{BUT4257,
  author="Markéta {Benešová} and Pavel {Dobis} and Pavel {Tománek} and Jitka {Brüstlová}",
  title="Measurement of local photoluminescence and optically induced photocurrent in semiconductor structures",
  booktitle="Photonics Prague 2002",
  year="2002",
  pages="146--146",
  publisher="Tech-Market,Praha",
  address="Praha",
  isbn="80-86114-46-5"
}