Detail publikace

Measurement of local photoluminescence and optically induced photocurrent in semiconductor structures

BENEŠOVÁ, M., DOBIS, P., TOMÁNEK, P., BRÜSTLOVÁ, J.

Originální název

Measurement of local photoluminescence and optically induced photocurrent in semiconductor structures

Anglický název

Measurement of local photoluminescence and optically induced photocurrent in semiconductor structures

Jazyk

en

Originální abstrakt

Near-field local Photoluminescence (PL) and photocurrent (PC) spectroscopic techniques are used to study of semiconductor quantum structures using a technique of reflection Scanning Near-field Optical Microscope (r-SNOM) in combination with Nitrogen laser and tuning dye laser. r-SNOM employs an uncoated and/or Au-metallized single-mode fiber tip both as nanosource and a nanoprobe. Due to the high lateral resolution of the microscope, it is possible to locate e.g. defects in a multiple quantum well grown by molecular beam epitaxy. Near-field characteristics of measured quantities are also discussed.

Anglický abstrakt

Near-field local Photoluminescence (PL) and photocurrent (PC) spectroscopic techniques are used to study of semiconductor quantum structures using a technique of reflection Scanning Near-field Optical Microscope (r-SNOM) in combination with Nitrogen laser and tuning dye laser. r-SNOM employs an uncoated and/or Au-metallized single-mode fiber tip both as nanosource and a nanoprobe. Due to the high lateral resolution of the microscope, it is possible to locate e.g. defects in a multiple quantum well grown by molecular beam epitaxy. Near-field characteristics of measured quantities are also discussed.

Dokumenty

BibTex


@inproceedings{BUT4257,
  author="Markéta {Benešová} and Pavel {Dobis} and Pavel {Tománek} and Jitka {Brüstlová}",
  title="Measurement of local photoluminescence and optically induced photocurrent in semiconductor structures",
  annote="Near-field local Photoluminescence (PL) and photocurrent (PC) spectroscopic techniques are used to study of semiconductor quantum structures using a technique of reflection Scanning Near-field Optical Microscope (r-SNOM) in combination with Nitrogen laser and tuning dye laser. r-SNOM employs an uncoated and/or Au-metallized single-mode fiber tip both as nanosource and a nanoprobe. Due to the high lateral resolution of the microscope, it is possible to locate e.g. defects in a multiple quantum well grown by molecular beam epitaxy. Near-field characteristics of measured quantities are also discussed.",
  address="Tech-Market,Praha",
  booktitle="Photonics Prague 2002",
  chapter="4257",
  howpublished="print",
  institution="Tech-Market,Praha",
  year="2002",
  month="may",
  pages="146--146",
  publisher="Tech-Market,Praha",
  type="conference paper"
}