Publication detail

Photoluminescence scanning near-field optical microscopy in GaAlAs/GaAs quantum wells

OTEVŘELOVÁ, D. GRMELA, L. TOMÁNEK, P. BRÜSTLOVÁ, J.

Original Title

Photoluminescence scanning near-field optical microscopy in GaAlAs/GaAs quantum wells

Czech Title

Fotoluminescenční mikroskopie v blízkém poli pro analýzu GaAlAs/GaAs kvantových jam

English Title

Photoluminescence scanning near-field optical microscopy in GaAlAs/GaAs quantum wells

Type

journal article

Language

en

Original Abstract

Submicron spatial resolution photoluminescence is used to assess radiative efficiency and spatial uniformity of GaAlAs/GaAs heterojunctions. Room temperature photo-luminescence of multiple GaAlAs wells with GaAs barriers was measured as a function of a facet of device perpendicular to the layer structure The scanning near-field optical microscope is applied for the diagnostics of the defects in semiconductor devices for instance in a multiple quantum well grown by molecular beam epitaxy. Our high resolution studies reveal that the radiative recombination for the GaAlAs quantum well is approx. 50 times more efficient than for the underlying GaAs film. The comparison of the Far-field and Near-field characteristics of measured quantities are also given.

Czech abstract

Luminiscence se submikronovým prostorovým rozlišením je použita ke studiu účinnosti vyzařování GaAlAs/GaAs heterostruktury. Jsou též porovnávány výsledky dosažené pomocí vzdáleného a blízkého pole.

English abstract

Submicron spatial resolution photoluminescence is used to assess radiative efficiency and spatial uniformity of GaAlAs/GaAs heterojunctions. Room temperature photo-luminescence of multiple GaAlAs wells with GaAs barriers was measured as a function of a facet of device perpendicular to the layer structure The scanning near-field optical microscope is applied for the diagnostics of the defects in semiconductor devices for instance in a multiple quantum well grown by molecular beam epitaxy. Our high resolution studies reveal that the radiative recombination for the GaAlAs quantum well is approx. 50 times more efficient than for the underlying GaAs film. The comparison of the Far-field and Near-field characteristics of measured quantities are also given.

Keywords

Local photoluminescence, scanning near-field optical microscopy, quantum well, superresolution

RIV year

2003

Released

01.09.2003

Publisher

SPIE

Location

Bellingham, USA

Pages from

640

Pages to

644

Pages count

5

BibTex


@article{BUT41429,
  author="Dana {Otevřelová} and Lubomír {Grmela} and Pavel {Tománek} and Jitka {Brüstlová}",
  title="Photoluminescence scanning near-field optical microscopy in GaAlAs/GaAs quantum wells",
  annote="Submicron spatial resolution photoluminescence is used to assess radiative efficiency and spatial uniformity of GaAlAs/GaAs heterojunctions. Room temperature photo-luminescence of multiple GaAlAs wells with GaAs barriers was measured as a function of a facet of device perpendicular to the layer structure The scanning near-field optical microscope is applied for the diagnostics of the defects in semiconductor devices for instance in a multiple quantum well grown by molecular beam epitaxy. Our high resolution studies reveal that the radiative recombination for the GaAlAs quantum well is approx. 50 times more efficient than for the underlying GaAs film. The comparison of the Far-field and Near-field characteristics of measured quantities are also given.",
  address="SPIE",
  chapter="41429",
  institution="SPIE",
  journal="Proceedings of SPIE",
  number="5036",
  volume="5036",
  year="2003",
  month="september",
  pages="640--644",
  publisher="SPIE",
  type="journal article"
}