Detail publikace

Photoluminescence scanning near-field optical microscopy in GaAlAs/GaAs quantum wells

OTEVŘELOVÁ, D. GRMELA, L. TOMÁNEK, P. BRÜSTLOVÁ, J.

Originální název

Photoluminescence scanning near-field optical microscopy in GaAlAs/GaAs quantum wells

Anglický název

Photoluminescence scanning near-field optical microscopy in GaAlAs/GaAs quantum wells

Jazyk

en

Originální abstrakt

Submicron spatial resolution photoluminescence is used to assess radiative efficiency and spatial uniformity of GaAlAs/GaAs heterojunctions. Room temperature photo-luminescence of multiple GaAlAs wells with GaAs barriers was measured as a function of a facet of device perpendicular to the layer structure The scanning near-field optical microscope is applied for the diagnostics of the defects in semiconductor devices for instance in a multiple quantum well grown by molecular beam epitaxy. Our high resolution studies reveal that the radiative recombination for the GaAlAs quantum well is approx. 50 times more efficient than for the underlying GaAs film. The comparison of the Far-field and Near-field characteristics of measured quantities are also given.

Anglický abstrakt

Submicron spatial resolution photoluminescence is used to assess radiative efficiency and spatial uniformity of GaAlAs/GaAs heterojunctions. Room temperature photo-luminescence of multiple GaAlAs wells with GaAs barriers was measured as a function of a facet of device perpendicular to the layer structure The scanning near-field optical microscope is applied for the diagnostics of the defects in semiconductor devices for instance in a multiple quantum well grown by molecular beam epitaxy. Our high resolution studies reveal that the radiative recombination for the GaAlAs quantum well is approx. 50 times more efficient than for the underlying GaAs film. The comparison of the Far-field and Near-field characteristics of measured quantities are also given.

Dokumenty

BibTex


@article{BUT41429,
  author="Dana {Otevřelová} and Lubomír {Grmela} and Pavel {Tománek} and Jitka {Brüstlová}",
  title="Photoluminescence scanning near-field optical microscopy in GaAlAs/GaAs quantum wells",
  annote="Submicron spatial resolution photoluminescence is used to assess radiative efficiency and spatial uniformity of GaAlAs/GaAs heterojunctions. Room temperature photo-luminescence of multiple GaAlAs wells with GaAs barriers was measured as a function of a facet of device perpendicular to the layer structure The scanning near-field optical microscope is applied for the diagnostics of the defects in semiconductor devices for instance in a multiple quantum well grown by molecular beam epitaxy. Our high resolution studies reveal that the radiative recombination for the GaAlAs quantum well is approx. 50 times more efficient than for the underlying GaAs film. The comparison of the Far-field and Near-field characteristics of measured quantities are also given.",
  address="SPIE",
  chapter="41429",
  institution="SPIE",
  journal="Proceedings of SPIE",
  number="5036",
  volume="5036",
  year="2003",
  month="september",
  pages="640--644",
  publisher="SPIE",
  type="journal article in Web of Science"
}