Publication detail

Behaviour of silicon nanostructure in electric field

HRUŠKA, P. GRMELA, L.

Original Title

Behaviour of silicon nanostructure in electric field

Czech Title

Chování křemíkových nanostruktur v elektrickém poli

English Title

Behaviour of silicon nanostructure in electric field

Type

conference paper

Language

en

Original Abstract

Paper presents a numerical analysis of quantum states and probability function of a Si nanostructure in a dielectric medium under varying bias. The position of probability function peak xp is traced and the bias, under which it abandons the structure (emission or discharging bias), is determined. Variations of the ground state energy with the bias is also examined. The Poisson and Schrödinger 1D models of COMSOL Multiphysics program are employed. The results would help understanding the electronic properties and behavior of ultrascaled memory devices utilizing semiconducting quantum dots and single nanocrystals, to mention only one application.

Czech abstract

Článek přináší číselnou analýzu kvantových stavů a funkci pravděpodobnosti Si nanostruktur v dielektrickém prostředí při měnícím se předpětí. Je vyjádřena poloha maxima pravděpodobnostní funkce xpTa je určeno předpětí, při kterém opouští strukturu (vyzářením nebo výbojem). Jsou zkoumány i změny energie základního stavu v závislosti na předpětí. K tomu je použit Poissonův-Schrödingerův 1D model oz programu COMSOL Multiphysics. Výsledky umožní lépe porozumět elektronickým vlastnostem a chování paměťových zařízení s polovodičovými kvantovými jámami a jednotlivými nanokrystaly.

English abstract

Paper presents a numerical analysis of quantum states and probability function of a Si nanostructure in a dielectric medium under varying bias. The position of probability function peak xp is traced and the bias, under which it abandons the structure (emission or discharging bias), is determined. Variations of the ground state energy with the bias is also examined. The Poisson and Schrödinger 1D models of COMSOL Multiphysics program are employed. The results would help understanding the electronic properties and behavior of ultrascaled memory devices utilizing semiconducting quantum dots and single nanocrystals, to mention only one application.

Keywords

nanostructure, quantum dot, discharging bias, Poisson-Schrödinger numerical analysis, Comsol multiphysics

RIV year

2009

Released

15.10.2009

Publisher

Faculty of Electrical Engineering and Informatics, Technical University of Košice,

Location

Košice, SK

ISBN

978-80-8086-122-3

Book

Proceedings of Physics of Materials 09, V. Lisý, D. Olčák (Eds).,

Pages from

34

Pages to

37

Pages count

4

BibTex


@inproceedings{BUT31126,
  author="Pavel {Hruška} and Lubomír {Grmela}",
  title="Behaviour of silicon nanostructure in electric field",
  annote="Paper presents a numerical analysis of quantum states and probability function of a Si nanostructure in a dielectric medium under varying bias. The position of probability function peak xp is traced and the bias, under which it abandons the structure (emission or discharging bias), is determined. Variations of the ground state energy with the bias is also examined. The Poisson and Schrödinger 1D models of COMSOL Multiphysics program are employed. The results would help understanding the electronic properties and behavior of ultrascaled memory devices utilizing semiconducting quantum dots and single nanocrystals, to mention only one application.",
  address="Faculty of Electrical Engineering and Informatics, Technical University of Košice,",
  booktitle="Proceedings of Physics of Materials 09, V. Lisý, D. Olčák (Eds).,",
  chapter="31126",
  howpublished="print",
  institution="Faculty of Electrical Engineering and Informatics, Technical University of Košice,",
  year="2009",
  month="october",
  pages="34--37",
  publisher="Faculty of Electrical Engineering and Informatics, Technical University of Košice,",
  type="conference paper"
}