Detail publikace

Behaviour of silicon nanostructure in electric field

HRUŠKA, P. GRMELA, L.

Originální název

Behaviour of silicon nanostructure in electric field

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Paper presents a numerical analysis of quantum states and probability function of a Si nanostructure in a dielectric medium under varying bias. The position of probability function peak xp is traced and the bias, under which it abandons the structure (emission or discharging bias), is determined. Variations of the ground state energy with the bias is also examined. The Poisson and Schrödinger 1D models of COMSOL Multiphysics program are employed. The results would help understanding the electronic properties and behavior of ultrascaled memory devices utilizing semiconducting quantum dots and single nanocrystals, to mention only one application.

Klíčová slova

nanostructure, quantum dot, discharging bias, Poisson-Schrödinger numerical analysis, Comsol multiphysics

Autoři

HRUŠKA, P.; GRMELA, L.

Rok RIV

2009

Vydáno

15. 10. 2009

Nakladatel

Faculty of Electrical Engineering and Informatics, Technical University of Košice,

Místo

Košice, SK

ISBN

978-80-8086-122-3

Kniha

Proceedings of Physics of Materials 09, V. Lisý, D. Olčák (Eds).,

Strany od

34

Strany do

37

Strany počet

4

BibTex

@inproceedings{BUT31126,
  author="Pavel {Hruška} and Lubomír {Grmela}",
  title="Behaviour of silicon nanostructure in electric field",
  booktitle="Proceedings of Physics of Materials 09, V. Lisý, D. Olčák (Eds).,",
  year="2009",
  pages="34--37",
  publisher="Faculty of Electrical Engineering and Informatics, Technical University of Košice,",
  address="Košice, SK",
  isbn="978-80-8086-122-3"
}