Publication detail

In-situ measurement of total ionising dose induced changes in threshold voltage and temperature coefficients of RADFETs

HOFMAN, J. HÁZE, J. JAKSIC, A. SHARP, R. VASOVIC, N.

Original Title

In-situ measurement of total ionising dose induced changes in threshold voltage and temperature coefficients of RADFETs

English Title

In-situ measurement of total ionising dose induced changes in threshold voltage and temperature coefficients of RADFETs

Type

journal article in Web of Science

Language

en

Original Abstract

This work presents results of a total ionising dose experiment, during which p-channel RADFETs were irradiated and measured under different gate bias conditions using an in-situ technique. The measurement system allowed threshold voltage shifts and temperature sensitivity of the shift to be measured during irradiation to 60 krad(Si) and the subsequent 55 day period of annealing. The experimental results obtained allow improved insight into temperature sensitivity related problems of RADFET based dosimetry systems for space and terrestrial applications. The results show that the radiation-induced decrease in mobility, caused by the interface trap build-up, has a predominant effect on RADFET temperature coefficients.

English abstract

This work presents results of a total ionising dose experiment, during which p-channel RADFETs were irradiated and measured under different gate bias conditions using an in-situ technique. The measurement system allowed threshold voltage shifts and temperature sensitivity of the shift to be measured during irradiation to 60 krad(Si) and the subsequent 55 day period of annealing. The experimental results obtained allow improved insight into temperature sensitivity related problems of RADFET based dosimetry systems for space and terrestrial applications. The results show that the radiation-induced decrease in mobility, caused by the interface trap build-up, has a predominant effect on RADFET temperature coefficients.

Keywords

RADFET, PMOS dosimeter, temperature effects, temperature coefficient, MTC, ZTC, automated test equipment, test methods.

Released

17.11.2016

Publisher

IEEE periodicals

Location

Piscatawy, NJ 08854 USA

Pages from

1

Pages to

5

Pages count

5

URL

Documents

BibTex


@article{BUT130481,
  author="Jiří {Hofman} and Jiří {Háze} and Aleksandar {Jaksic} and Richard {Sharp} and Nikola {Vasovic}",
  title="In-situ measurement of total ionising dose induced changes in threshold voltage and temperature coefficients of RADFETs",
  annote="This work presents results of a total ionising dose experiment, during which p-channel RADFETs were irradiated and measured under different gate bias conditions using an in-situ technique. The measurement system allowed threshold voltage shifts and temperature sensitivity of the shift to be measured during irradiation to 60 krad(Si) and the subsequent 55 day period of annealing. The experimental results obtained allow improved insight into temperature sensitivity related problems of RADFET based dosimetry systems for space and terrestrial applications. The results show that the radiation-induced decrease in mobility, caused by the interface trap build-up, has a predominant effect on RADFET temperature coefficients.",
  address="IEEE periodicals",
  chapter="130481",
  doi="10.1109/TNS.2016.2630275",
  howpublished="print",
  institution="IEEE periodicals",
  number="99",
  volume="PP",
  year="2016",
  month="november",
  pages="1--5",
  publisher="IEEE periodicals",
  type="journal article in Web of Science"
}