Detail publikace

In-situ measurement of total ionising dose induced changes in threshold voltage and temperature coefficients of RADFETs

Originální název

In-situ measurement of total ionising dose induced changes in threshold voltage and temperature coefficients of RADFETs

Anglický název

In-situ measurement of total ionising dose induced changes in threshold voltage and temperature coefficients of RADFETs

Jazyk

en

Originální abstrakt

This work presents results of a total ionising dose experiment, during which p-channel RADFETs were irradiated and measured under different gate bias conditions using an in-situ technique. The measurement system allowed threshold voltage shifts and temperature sensitivity of the shift to be measured during irradiation to 60 krad(Si) and the subsequent 55 day period of annealing. The experimental results obtained allow improved insight into temperature sensitivity related problems of RADFET based dosimetry systems for space and terrestrial applications. The results show that the radiation-induced decrease in mobility, caused by the interface trap build-up, has a predominant effect on RADFET temperature coefficients.

Anglický abstrakt

This work presents results of a total ionising dose experiment, during which p-channel RADFETs were irradiated and measured under different gate bias conditions using an in-situ technique. The measurement system allowed threshold voltage shifts and temperature sensitivity of the shift to be measured during irradiation to 60 krad(Si) and the subsequent 55 day period of annealing. The experimental results obtained allow improved insight into temperature sensitivity related problems of RADFET based dosimetry systems for space and terrestrial applications. The results show that the radiation-induced decrease in mobility, caused by the interface trap build-up, has a predominant effect on RADFET temperature coefficients.

Dokumenty

BibTex


@article{BUT130481,
  author="Jiří {Hofman} and Jiří {Háze} and Aleksandar {Jaksic} and Richard {Sharp} and Nikola {Vasovic}",
  title="In-situ measurement of total ionising dose induced changes in threshold voltage and temperature coefficients of RADFETs",
  annote="This work presents results of a total ionising dose experiment, during which p-channel RADFETs were irradiated and measured under different gate bias conditions using an in-situ technique. The measurement system allowed threshold voltage shifts and temperature sensitivity of the shift to be measured during irradiation to 60 krad(Si) and the subsequent 55 day period of annealing. The experimental results obtained allow improved insight into temperature sensitivity related problems of RADFET based dosimetry systems for space and terrestrial applications. The results show that the radiation-induced decrease in mobility, caused by the interface trap build-up, has a predominant effect on RADFET temperature coefficients.",
  address="IEEE periodicals",
  chapter="130481",
  doi="10.1109/TNS.2016.2630275",
  howpublished="print",
  institution="IEEE periodicals",
  number="99",
  volume="PP",
  year="2016",
  month="november",
  pages="1--5",
  publisher="IEEE periodicals",
  type="journal article in Web of Science"
}