Publication detail

Towards nanometer scale MOSFETs

HORÁK, M.

Original Title

Towards nanometer scale MOSFETs

Type

conference paper

Language

English

Original Abstract

Two theoretical methods, the effective mass approximation and the tight binding method, that can be used for nanoscale MOSFETs modeling are briefly described, Both methods can be implemented on a PC computer and both give satisfactory results.

Key words in English

nanoscale MOSFET, effective mass, tight binding method

Authors

HORÁK, M.

RIV year

2003

Released

22. 12. 2003

Publisher

Technological Institute of Crete, Chania, Greece

Location

Chania, Greece

ISBN

80-214-2461-3

Book

Proceedings od the Socrates Workshop 2003. Intensive Training Programme in Electronic System Design.

Pages from

159

Pages to

164

Pages count

6

BibTex

@inproceedings{BUT9403,
  author="Michal {Horák}",
  title="Towards nanometer scale MOSFETs",
  booktitle="Proceedings od the Socrates Workshop 2003. Intensive Training Programme in Electronic System Design.",
  year="2003",
  pages="6",
  publisher="Technological Institute of Crete, Chania, Greece",
  address="Chania, Greece",
  isbn="80-214-2461-3"
}