Detail publikace

Towards nanometer scale MOSFETs

HORÁK, M.

Originální název

Towards nanometer scale MOSFETs

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Two theoretical methods, the effective mass approximation and the tight binding method, that can be used for nanoscale MOSFETs modeling are briefly described, Both methods can be implemented on a PC computer and both give satisfactory results.

Klíčová slova v angličtině

nanoscale MOSFET, effective mass, tight binding method

Autoři

HORÁK, M.

Rok RIV

2003

Vydáno

22. 12. 2003

Nakladatel

Technological Institute of Crete, Chania, Greece

Místo

Chania, Greece

ISBN

80-214-2461-3

Kniha

Proceedings od the Socrates Workshop 2003. Intensive Training Programme in Electronic System Design.

Strany od

159

Strany do

164

Strany počet

6

BibTex

@inproceedings{BUT9403,
  author="Michal {Horák}",
  title="Towards nanometer scale MOSFETs",
  booktitle="Proceedings od the Socrates Workshop 2003. Intensive Training Programme in Electronic System Design.",
  year="2003",
  pages="6",
  publisher="Technological Institute of Crete, Chania, Greece",
  address="Chania, Greece",
  isbn="80-214-2461-3"
}