The Gummel-Poon Statistical Model

conference paper

English

The statistical model of the bipolar transistor must include the parameter correlations and proper distributions to accurately simulate transistor performance. The contribution presents the statistical Gummel-Poon model including the correlated parameters of saturation current and forward beta to account for transistor parameters production variations. The simulation results of a correlated model show a good match of measured and simulated characteristics and confirm the fundamental role of saturation current on forward beta dependence for correlated model development.

bipolar transistor, Gummel-Poon model, statistical model

RECMAN, M.

2001

1. 1. 2001

Vyd. Ing. Zdeněk Novotný, Brno 2001,

Brno

80-214-2027-8

Socrates Workshop 2001. Intensive Training Programme in Electronic System Design. Proceedings. Crete September 3-12, 2001. Edited by V. Musil and J.Brzobohaty.

276

281

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