Detail publikace

The Gummel-Poon Statistical Model

RECMAN, M.

Originální název

The Gummel-Poon Statistical Model

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

The statistical model of the bipolar transistor must include the parameter correlations and proper distributions to accurately simulate transistor performance. The contribution presents the statistical Gummel-Poon model including the correlated parameters of saturation current and forward beta to account for transistor parameters production variations. The simulation results of a correlated model show a good match of measured and simulated characteristics and confirm the fundamental role of saturation current on forward beta dependence for correlated model development.

Klíčová slova

bipolar transistor, Gummel-Poon model, statistical model

Autoři

RECMAN, M.

Rok RIV

2001

Vydáno

1. 1. 2001

Nakladatel

Vyd. Ing. Zdeněk Novotný, Brno 2001,

Místo

Brno

ISBN

80-214-2027-8

Kniha

Socrates Workshop 2001. Intensive Training Programme in Electronic System Design. Proceedings. Crete September 3-12, 2001. Edited by V. Musil and J.Brzobohaty.

Strany od

276

Strany do

281

Strany počet

6

BibTex

@{BUT69642
}