Publication detail

On the Properties Of GaAsP Diodes Under PN Junction Local Avalanche Breakdown Conditions

KOKTAVÝ, P. KOKTAVÝ, B.

Original Title

On the Properties Of GaAsP Diodes Under PN Junction Local Avalanche Breakdown Conditions

English Title

On the Properties Of GaAsP Diodes Under PN Junction Local Avalanche Breakdown Conditions

Type

conference paper

Language

en

Original Abstract

The present paper is intended to show the results of our theoretical as well as experimental studies of the phenomena that occur in consequence of micro-plasma discharges at localized points of PN junctions of reverse biased GaAs0,60P0,40 LEDs, which in turn manifest themselves as bi-stable or multi-stable noise. A practical output of this paper consists in a proposal for the methodology and experimental setup to be used for the noise diagnostics of P-N junctions, focusing on these junctions structural defects. The method is based on the experimental analysis of the narrow-band noise current r.m.s. value versus reverse current measured for bi-stable current conduction in micro-plasma regions. Each local peak of this curve corresponds to a single microplasma active region. The noise current r.m.s. value is decreasing growing temperature, which is in a good agreement with the microplasma related bi-stable current conduction.

English abstract

The present paper is intended to show the results of our theoretical as well as experimental studies of the phenomena that occur in consequence of micro-plasma discharges at localized points of PN junctions of reverse biased GaAs0,60P0,40 LEDs, which in turn manifest themselves as bi-stable or multi-stable noise. A practical output of this paper consists in a proposal for the methodology and experimental setup to be used for the noise diagnostics of P-N junctions, focusing on these junctions structural defects. The method is based on the experimental analysis of the narrow-band noise current r.m.s. value versus reverse current measured for bi-stable current conduction in micro-plasma regions. Each local peak of this curve corresponds to a single microplasma active region. The noise current r.m.s. value is decreasing growing temperature, which is in a good agreement with the microplasma related bi-stable current conduction.

Keywords

Microplasma noise, GaAsP LED diode, PN junction, Avalanche, Impact ionization

RIV year

2006

Released

05.09.2006

Publisher

Slovak University of Technology in Bratislava

Location

Bratislava

ISBN

80-227-2467-X

Book

Physical and Material Engineering 2006

Pages from

56

Pages to

59

Pages count

4

BibTex


@inproceedings{BUT20221,
  author="Pavel {Koktavý} and Bohumil {Koktavý}",
  title="On the Properties Of GaAsP Diodes Under PN Junction Local Avalanche Breakdown Conditions",
  annote="The present paper is intended to show the results of our theoretical as well as experimental studies of the phenomena that occur in consequence of micro-plasma discharges at localized points of PN junctions of reverse biased GaAs0,60P0,40 LEDs, which in turn manifest themselves as bi-stable or multi-stable noise. 
A practical output of this paper consists in a proposal for the methodology and experimental setup to be used for the noise diagnostics of P-N junctions, focusing on these junctions structural defects. The method is based on the experimental analysis of the narrow-band noise current r.m.s. value versus reverse current measured for bi-stable current conduction in micro-plasma regions. Each local peak of this curve corresponds to a single microplasma active region. The noise current r.m.s. value is decreasing growing temperature, which is in a good agreement with the microplasma related bi-stable current conduction.",
  address="Slovak University of Technology in Bratislava",
  booktitle="Physical and Material Engineering 2006",
  chapter="20221",
  institution="Slovak University of Technology in Bratislava",
  year="2006",
  month="september",
  pages="56",
  publisher="Slovak University of Technology in Bratislava",
  type="conference paper"
}