Detail publikace

On the Properties Of GaAsP Diodes Under PN Junction Local Avalanche Breakdown Conditions

Originální název

On the Properties Of GaAsP Diodes Under PN Junction Local Avalanche Breakdown Conditions

Anglický název

On the Properties Of GaAsP Diodes Under PN Junction Local Avalanche Breakdown Conditions

Jazyk

en

Originální abstrakt

The present paper is intended to show the results of our theoretical as well as experimental studies of the phenomena that occur in consequence of micro-plasma discharges at localized points of PN junctions of reverse biased GaAs0,60P0,40 LEDs, which in turn manifest themselves as bi-stable or multi-stable noise. A practical output of this paper consists in a proposal for the methodology and experimental setup to be used for the noise diagnostics of P-N junctions, focusing on these junctions structural defects. The method is based on the experimental analysis of the narrow-band noise current r.m.s. value versus reverse current measured for bi-stable current conduction in micro-plasma regions. Each local peak of this curve corresponds to a single microplasma active region. The noise current r.m.s. value is decreasing growing temperature, which is in a good agreement with the microplasma related bi-stable current conduction.

Anglický abstrakt

The present paper is intended to show the results of our theoretical as well as experimental studies of the phenomena that occur in consequence of micro-plasma discharges at localized points of PN junctions of reverse biased GaAs0,60P0,40 LEDs, which in turn manifest themselves as bi-stable or multi-stable noise. A practical output of this paper consists in a proposal for the methodology and experimental setup to be used for the noise diagnostics of P-N junctions, focusing on these junctions structural defects. The method is based on the experimental analysis of the narrow-band noise current r.m.s. value versus reverse current measured for bi-stable current conduction in micro-plasma regions. Each local peak of this curve corresponds to a single microplasma active region. The noise current r.m.s. value is decreasing growing temperature, which is in a good agreement with the microplasma related bi-stable current conduction.

BibTex


@inproceedings{BUT20221,
  author="Pavel {Koktavý} and Bohumil {Koktavý}",
  title="On the Properties Of GaAsP Diodes Under PN Junction Local Avalanche Breakdown Conditions",
  annote="The present paper is intended to show the results of our theoretical as well as experimental studies of the phenomena that occur in consequence of micro-plasma discharges at localized points of PN junctions of reverse biased GaAs0,60P0,40 LEDs, which in turn manifest themselves as bi-stable or multi-stable noise. 
A practical output of this paper consists in a proposal for the methodology and experimental setup to be used for the noise diagnostics of P-N junctions, focusing on these junctions structural defects. The method is based on the experimental analysis of the narrow-band noise current r.m.s. value versus reverse current measured for bi-stable current conduction in micro-plasma regions. Each local peak of this curve corresponds to a single microplasma active region. The noise current r.m.s. value is decreasing growing temperature, which is in a good agreement with the microplasma related bi-stable current conduction.",
  address="Slovak University of Technology in Bratislava",
  booktitle="Physical and Material Engineering 2006",
  chapter="20221",
  institution="Slovak University of Technology in Bratislava",
  year="2006",
  month="september",
  pages="56",
  publisher="Slovak University of Technology in Bratislava",
  type="conference paper"
}