Publication detail

The dependence of brightness and threshold voltage of memory ZnS:Mn thin film electroluminescent device upon its thickness

AHMED, M.

Original Title

The dependence of brightness and threshold voltage of memory ZnS:Mn thin film electroluminescent device upon its thickness

English Title

The dependence of brightness and threshold voltage of memory ZnS:Mn thin film electroluminescent device upon its thickness

Type

conference paper

Language

en

Original Abstract

Thin film electroluminescent devices made from ZnS:Mn can be designed to exhibit an inherent hysteresis in the luminance vs. applied voltage characteristics. This memory behavior offers attractive advantages for efficient operation of displays with very large information content. Additionally, such memory devices can also be switched by light or electron beams, making possible such applications as image storage and a CRT with an active faceplate. If the device is driven near the threshold voltage, a pronounced hysteresis effect in the brightness vs. pulse width response curve also occurs. The dependence of brightness characteristics, as well as the threshold voltage and response time on the film thickness of the ZnS:Mn layer is reported. The experimental results are in good agreement with the theoretical prediction.

English abstract

Thin film electroluminescent devices made from ZnS:Mn can be designed to exhibit an inherent hysteresis in the luminance vs. applied voltage characteristics. This memory behavior offers attractive advantages for efficient operation of displays with very large information content. Additionally, such memory devices can also be switched by light or electron beams, making possible such applications as image storage and a CRT with an active faceplate. If the device is driven near the threshold voltage, a pronounced hysteresis effect in the brightness vs. pulse width response curve also occurs. The dependence of brightness characteristics, as well as the threshold voltage and response time on the film thickness of the ZnS:Mn layer is reported. The experimental results are in good agreement with the theoretical prediction.

Keywords

electroluminescence, ZnS:Mn thin film, brightess, threshold voltage, hysteresis, response time

RIV year

2006

Released

27.04.2006

Publisher

Vysoké učení technické v Brně, FEKT a FIT

Location

Brno

ISBN

80-214-3162-8

Book

Proceedings of the 12th Conference STUDENT EEICT 2006

Pages from

128

Pages to

132

Pages count

5

BibTex


@inproceedings{BUT18544,
  author="Mustafa M. Abdalla {Ahmed}",
  title="The dependence of brightness and threshold voltage of memory ZnS:Mn thin film electroluminescent device upon its thickness",
  annote="Thin film electroluminescent devices made from ZnS:Mn can be designed to exhibit an inherent hysteresis in the luminance vs. applied voltage characteristics. This memory behavior offers attractive advantages for efficient operation of displays with very large information content. Additionally, such memory devices can also be switched by light or electron beams, making possible such applications as image storage and a CRT with an active faceplate. If the device is driven near the threshold voltage, a pronounced hysteresis effect in the brightness vs. pulse width response curve also occurs. The dependence of brightness characteristics, as well as the threshold voltage and response time on the film thickness of the ZnS:Mn layer is reported. The experimental results are in good agreement with the theoretical prediction.",
  address="Vysoké učení technické v Brně, FEKT a FIT",
  booktitle="Proceedings of the 12th Conference STUDENT EEICT 2006",
  chapter="18544",
  institution="Vysoké učení technické v Brně, FEKT a FIT",
  year="2006",
  month="april",
  pages="128--132",
  publisher="Vysoké učení technické v Brně, FEKT a FIT",
  type="conference paper"
}