Detail publikace

The dependence of brightness and threshold voltage of memory ZnS:Mn thin film electroluminescent device upon its thickness

AHMED, M.

Originální název

The dependence of brightness and threshold voltage of memory ZnS:Mn thin film electroluminescent device upon its thickness

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Thin film electroluminescent devices made from ZnS:Mn can be designed to exhibit an inherent hysteresis in the luminance vs. applied voltage characteristics. This memory behavior offers attractive advantages for efficient operation of displays with very large information content. Additionally, such memory devices can also be switched by light or electron beams, making possible such applications as image storage and a CRT with an active faceplate. If the device is driven near the threshold voltage, a pronounced hysteresis effect in the brightness vs. pulse width response curve also occurs. The dependence of brightness characteristics, as well as the threshold voltage and response time on the film thickness of the ZnS:Mn layer is reported. The experimental results are in good agreement with the theoretical prediction.

Klíčová slova

electroluminescence, ZnS:Mn thin film, brightess, threshold voltage, hysteresis, response time

Autoři

AHMED, M.

Rok RIV

2006

Vydáno

27. 4. 2006

Nakladatel

Vysoké učení technické v Brně, FEKT a FIT

Místo

Brno

ISBN

80-214-3162-8

Kniha

Proceedings of the 12th Conference STUDENT EEICT 2006

Strany od

128

Strany do

132

Strany počet

5

BibTex

@inproceedings{BUT18544,
  author="Mustafa M. Abdalla {Ahmed}",
  title="The dependence of brightness and threshold voltage of memory ZnS:Mn thin film electroluminescent device upon its thickness",
  booktitle="Proceedings of the 12th Conference STUDENT EEICT 2006",
  year="2006",
  pages="128--132",
  publisher="Vysoké učení technické v Brně, FEKT a FIT",
  address="Brno",
  isbn="80-214-3162-8"
}