Publication detail
In-situ measurement of total ionising dose induced changes in threshold voltage and temperature coefficients of RADFETs
HOFMAN, J. HÁZE, J. JAKSIC, A. SHARP, R. VASOVIC, N.
Original Title
In-situ measurement of total ionising dose induced changes in threshold voltage and temperature coefficients of RADFETs
English Title
In-situ measurement of total ionising dose induced changes in threshold voltage and temperature coefficients of RADFETs
Type
journal article in Web of Science
Language
en
Original Abstract
This work presents results of a total ionising dose experiment, during which p-channel RADFETs were irradiated and measured under different gate bias conditions using an in-situ technique. The measurement system allowed threshold voltage shifts and temperature sensitivity of the shift to be measured during irradiation to 60 krad(Si) and the subsequent 55 day period of annealing. The experimental results obtained allow improved insight into temperature sensitivity related problems of RADFET based dosimetry systems for space and terrestrial applications. The results show that the radiation-induced decrease in mobility, caused by the interface trap build-up, has a predominant effect on RADFET temperature coefficients.
English abstract
This work presents results of a total ionising dose experiment, during which p-channel RADFETs were irradiated and measured under different gate bias conditions using an in-situ technique. The measurement system allowed threshold voltage shifts and temperature sensitivity of the shift to be measured during irradiation to 60 krad(Si) and the subsequent 55 day period of annealing. The experimental results obtained allow improved insight into temperature sensitivity related problems of RADFET based dosimetry systems for space and terrestrial applications. The results show that the radiation-induced decrease in mobility, caused by the interface trap build-up, has a predominant effect on RADFET temperature coefficients.
Keywords
RADFET, PMOS dosimeter, temperature effects, temperature coefficient, MTC, ZTC, automated test equipment, test methods.
Released
17.11.2016
Publisher
IEEE periodicals
Location
Piscatawy, NJ 08854 USA
ISBN
0018-9499
Periodical
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Year of study
PP
Number
99
State
US
Pages from
1
Pages to
5
Pages count
5
URL
Documents
BibTex
@article{BUT130481,
author="Jiří {Hofman} and Jiří {Háze} and Aleksandar {Jaksic} and Richard {Sharp} and Nikola {Vasovic}",
title="In-situ measurement of total ionising dose induced changes in threshold voltage and temperature coefficients of RADFETs",
annote="This work presents results of a total ionising dose experiment, during which p-channel RADFETs were irradiated and measured under different gate bias conditions using an in-situ technique. The measurement system allowed threshold voltage shifts and temperature sensitivity of the shift to be measured during irradiation to 60 krad(Si) and the subsequent 55 day period of annealing. The experimental results obtained allow improved insight into temperature sensitivity related problems of RADFET based dosimetry systems for space and terrestrial applications. The results show that the radiation-induced decrease in mobility, caused by the interface trap build-up, has a predominant effect on RADFET temperature coefficients.",
address="IEEE periodicals",
chapter="130481",
doi="10.1109/TNS.2016.2630275",
howpublished="print",
institution="IEEE periodicals",
number="99",
volume="PP",
year="2016",
month="november",
pages="1--5",
publisher="IEEE periodicals",
type="journal article in Web of Science"
}