Detail publikace

Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements

Originální název

Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements

Anglický název

Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements

Jazyk

en

Originální abstrakt

The memory elements, memristor being the best known of them, driven by a periodical waveform exhibit the well-known pinched hysteresis loops. The hysteresis is caused by a memory effect which results in a nonzero area closed within the loop. This paper presents an analytical formula for the loop area. This formula is then applied to memory elements whose parameter-vs.-state maps are modeled in the polynomial form. The TiO2 memristor, a special subset of the above elements, is analyzed as a demonstration example.

Anglický abstrakt

The memory elements, memristor being the best known of them, driven by a periodical waveform exhibit the well-known pinched hysteresis loops. The hysteresis is caused by a memory effect which results in a nonzero area closed within the loop. This paper presents an analytical formula for the loop area. This formula is then applied to memory elements whose parameter-vs.-state maps are modeled in the polynomial form. The TiO2 memristor, a special subset of the above elements, is analyzed as a demonstration example.

BibTex


@article{BUT99802,
  author="Zdeněk {Biolek} and Dalibor {Biolek} and Viera {Biolková}",
  title="Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements",
  annote="The memory elements, memristor being the best known of them, driven by a periodical waveform exhibit the well-known pinched hysteresis loops. The hysteresis is caused by a memory effect which results in a nonzero area closed within the loop. This paper presents an analytical formula for the loop area. This formula is then applied to memory elements whose parameter-vs.-state maps are modeled in the polynomial form. The TiO2 memristor, a special subset of the above elements, is analyzed as a demonstration example.",
  address="Společnost pro radioeletronické inženýrství",
  chapter="99802",
  institution="Společnost pro radioeletronické inženýrství",
  number="1",
  volume="22",
  year="2013",
  month="april",
  pages="132--135",
  publisher="Společnost pro radioeletronické inženýrství",
  type="journal article in Web of Science"
}