Detail publikace

Failure model of MOS transistors

Originální název

Failure model of MOS transistors

Anglický název

Failure model of MOS transistors

Jazyk

en

Originální abstrakt

Effects of gate-oxide failures on the operation of MOS transistor and describes the models of gate-oxide shorts (GOS) in n-channel and p-channel MOS transistors and simulation of circuits with these models.

Anglický abstrakt

Effects of gate-oxide failures on the operation of MOS transistor and describes the models of gate-oxide shorts (GOS) in n-channel and p-channel MOS transistors and simulation of circuits with these models.

BibTex


@inproceedings{BUT9589,
  author="Robert {Pasz} and Vladislav {Musil}",
  title="Failure model of MOS transistors",
  annote="Effects of gate-oxide failures on the operation of MOS transistor and describes the models of gate-oxide shorts (GOS) in n-channel and          p-channel MOS transistors and simulation of circuits with these models.
",
  address="Nakl. Ing. Z. Novotný",
  booktitle="Proceedings of EDS 2003 Electronic Devices and Systems Conference",
  chapter="9589",
  institution="Nakl. Ing. Z. Novotný",
  year="2003",
  month="september",
  pages="234",
  publisher="Nakl. Ing. Z. Novotný",
  type="conference paper"
}