Detail publikace

Noise and non-linearity as reliability indicators of electronic devices

Originální název

Noise and non-linearity as reliability indicators of electronic devices

Anglický název

Noise and non-linearity as reliability indicators of electronic devices

Jazyk

en

Originální abstrakt

An application of noise and non-linearity measurements in analysis, diagnostics and prediction of reliability of electronic devices is discussed. The sensitivity of noise and non-linearity to the device defects and other irregularities is typical feature of these methods. Conceptions of 1/f noise, burst or RTS noise, thermal noise and third harmonic voltage are described and their explanation is done. The results of noise and non-linearity measurements are shown. Possible reliability indicators for conducting film resistors, MOSFETs and quantum dots are presented.

Anglický abstrakt

An application of noise and non-linearity measurements in analysis, diagnostics and prediction of reliability of electronic devices is discussed. The sensitivity of noise and non-linearity to the device defects and other irregularities is typical feature of these methods. Conceptions of 1/f noise, burst or RTS noise, thermal noise and third harmonic voltage are described and their explanation is done. The results of noise and non-linearity measurements are shown. Possible reliability indicators for conducting film resistors, MOSFETs and quantum dots are presented.

BibTex


@inproceedings{BUT9488,
  author="Josef {Šikula} and Pavel {Dobis} and Vlasta {Sedláková}",
  title="Noise and non-linearity as reliability indicators of electronic devices",
  annote="An application of noise and non-linearity measurements in analysis, diagnostics and prediction of reliability of electronic devices is discussed. The sensitivity of noise and non-linearity to the device defects and other irregularities is typical feature of these methods. Conceptions of 1/f noise, burst or RTS noise, thermal noise and third harmonic voltage are described and their explanation is done. The results of noise and non-linearity measurements are shown. Possible reliability indicators for conducting film resistors, MOSFETs and quantum dots are presented.",
  address="MIDEM Slovenia",
  booktitle="MIDEM 2003 Conference Proceedings",
  chapter="9488",
  institution="MIDEM Slovenia",
  year="2003",
  month="january",
  pages="3",
  publisher="MIDEM Slovenia",
  type="conference paper"
}