Detail publikace

Low-frequency noise measurements used for semiconductor light active devices

Originální název

Low-frequency noise measurements used for semiconductor light active devices

Anglický název

Low-frequency noise measurements used for semiconductor light active devices

Jazyk

en

Originální abstrakt

Three different sets of semiconductors light active devices were by low noise diagnostic described. In the first set the low frequency noise of 2.3 microm CW GaSb based laser diodes was measured, in set II the noise characteristic of forward biased silicon monocrystalline solar cells were measured and in set III the noise characteristic of forward biased Si:H amorphous solar cells were measured.

Anglický abstrakt

Three different sets of semiconductors light active devices were by low noise diagnostic described. In the first set the low frequency noise of 2.3 microm CW GaSb based laser diodes was measured, in set II the noise characteristic of forward biased silicon monocrystalline solar cells were measured and in set III the noise characteristic of forward biased Si:H amorphous solar cells were measured.

BibTex


@article{BUT46285,
  author="Jiří {Vaněk} and Zdeněk {Chobola} and Vladimír {Brzokoupil} and Jiří {Kazelle}",
  title="Low-frequency noise measurements used for semiconductor light active devices",
  annote="Three different sets of semiconductors light active devices were by low noise diagnostic described. In the first set the low frequency noise of 2.3 microm CW GaSb based laser diodes was measured, in set II the noise characteristic of forward biased silicon monocrystalline solar cells were measured and in set III the noise characteristic of forward biased Si:H amorphous solar cells were measured.",
  chapter="46285",
  journal="Proceedings of SPIE",
  number="5844",
  volume="2005",
  year="2005",
  month="may",
  pages="86",
  type="journal article - other"
}