Detail publikace

A New Approach to Define Dynamics of the Ion Channel Gates

Originální název

A New Approach to Define Dynamics of the Ion Channel Gates

Anglický název

A New Approach to Define Dynamics of the Ion Channel Gates

Jazyk

en

Originální abstrakt

Voltage-gated ion channels are of great importance in the generation and propagation of electrical signals in the excitable cellmembranes. How these channels respond to changes in the potential across themembrane has been a challenging problem, and different approaches have been proposed to address the mechanism of voltage sensing and gating in these channels. In this study, we attempt a new approach by considering a simple two-state gate system and applying the path probability method to construct a nonequilibrium statistical mechanical model of the system. The model which is based on the principles of statistical physics provides a firm physical basis for ion channel gating.

Anglický abstrakt

Voltage-gated ion channels are of great importance in the generation and propagation of electrical signals in the excitable cellmembranes. How these channels respond to changes in the potential across themembrane has been a challenging problem, and different approaches have been proposed to address the mechanism of voltage sensing and gating in these channels. In this study, we attempt a new approach by considering a simple two-state gate system and applying the path probability method to construct a nonequilibrium statistical mechanical model of the system. The model which is based on the principles of statistical physics provides a firm physical basis for ion channel gating.

BibTex


@article{BUT41553,
  author="Mahmut {Ozer} and Riza {Erdem} and Ivo {Provazník}",
  title="A New Approach to Define Dynamics of the Ion Channel Gates",
  annote="Voltage-gated ion channels are of great importance in the generation and propagation of electrical signals in the excitable cellmembranes. How these channels respond to changes in the potential across themembrane has been a challenging problem, and different approaches have been proposed to address the mechanism of voltage sensing and gating in these channels. In this study, we attempt a new approach by considering a simple two-state gate system and applying the path probability method to construct a  nonequilibrium statistical mechanical model of the system. The model which
is based on the principles of statistical physics provides a firm physical basis for ion channel gating.",
  address="Lippincott Williams & Wilkins",
  chapter="41553",
  institution="Lippincott Williams & Wilkins",
  journal="Neuroreport",
  number="2",
  volume="15",
  year="2004",
  month="february",
  pages="335",
  publisher="Lippincott Williams & Wilkins",
  type="journal article - other"
}