Detail publikace
RTS Noise in Submicron MOSFETs: Low and High Field Effects
Originální název
RTS Noise in Submicron MOSFETs: Low and High Field Effects
Anglický název
RTS Noise in Submicron MOSFETs: Low and High Field Effects
Jazyk
en
Originální abstrakt
RTS noise amplitude and capture and emission processes time constants are analysed as a function of gate and drain voltage / lateral electric field intensity in submicron MOSFETs
Anglický abstrakt
RTS noise amplitude and capture and emission processes time constants are analysed as a function of gate and drain voltage / lateral electric field intensity in submicron MOSFETs
BibTex
@inproceedings{BUT16510,
author="Munecazu {Tacano} and Josef {Šikula} and Jan {Hlávka} and Jan {Pavelka} and Vlasta {Sedláková} and Sumihisa {Hashiguchi} and Masato {Toita}",
title="RTS Noise in Submicron MOSFETs: Low and High Field Effects",
annote="RTS noise amplitude and capture and emission processes time constants are analysed as a function of gate and drain voltage / lateral electric field intensity in submicron MOSFETs",
address="VUT",
booktitle="Proceedings of EDS'05 Electronic Devices and Systems IMAPS CS Int. Conf.",
chapter="16510",
institution="VUT",
year="2005",
month="january",
pages="XV",
publisher="VUT",
type="conference paper"
}