Detail publikace

RTS Noise in Submicron MOSFETs: Low and High Field Effects

Originální název

RTS Noise in Submicron MOSFETs: Low and High Field Effects

Anglický název

RTS Noise in Submicron MOSFETs: Low and High Field Effects

Jazyk

en

Originální abstrakt

RTS noise amplitude and capture and emission processes time constants are analysed as a function of gate and drain voltage / lateral electric field intensity in submicron MOSFETs

Anglický abstrakt

RTS noise amplitude and capture and emission processes time constants are analysed as a function of gate and drain voltage / lateral electric field intensity in submicron MOSFETs

BibTex


@inproceedings{BUT16510,
  author="Munecazu {Tacano} and Josef {Šikula} and Jan {Hlávka} and Jan {Pavelka} and Vlasta {Sedláková} and Sumihisa {Hashiguchi} and Masato {Toita}",
  title="RTS Noise in Submicron MOSFETs: Low and High Field Effects",
  annote="RTS noise amplitude and capture and emission processes time constants are analysed as a function of gate and drain voltage / lateral electric field intensity in submicron MOSFETs",
  address="VUT",
  booktitle="Proceedings of EDS'05 Electronic Devices and Systems IMAPS CS Int. Conf.",
  chapter="16510",
  institution="VUT",
  year="2005",
  month="january",
  pages="XV",
  publisher="VUT",
  type="conference paper"
}