Detail publikace

0.3-V Nanopower Biopotential Low-Pass Filter

Originální název

0.3-V Nanopower Biopotential Low-Pass Filter

Anglický název

0.3-V Nanopower Biopotential Low-Pass Filter

Jazyk

en

Originální abstrakt

This paper presents a compact power-efficient CMOS fourth-order low-pass filter suitable for electrocardiogram (ECG) acquisition systems. The CMOS structure of the proposed filter utilize the bulkdriven technique and operates in subthreshold region to achieve extremely low-voltage supply (0.3V) and nanopower consumption (0.676 nW) for cut-off frequency of 100 Hz. The filter was designed and simulated using 0.18 mu m CMOS TSMC technology. The total input referred noise of the filter is 87 mu Vrms and the dynamic range is 58.1 dB. The filter offers the best figure of merit of 2.91 x 10(-14) J, the lowest power consumption and voltage supply, compared with the previous state-of-the-art nanowatt filter designs.

Anglický abstrakt

This paper presents a compact power-efficient CMOS fourth-order low-pass filter suitable for electrocardiogram (ECG) acquisition systems. The CMOS structure of the proposed filter utilize the bulkdriven technique and operates in subthreshold region to achieve extremely low-voltage supply (0.3V) and nanopower consumption (0.676 nW) for cut-off frequency of 100 Hz. The filter was designed and simulated using 0.18 mu m CMOS TSMC technology. The total input referred noise of the filter is 87 mu Vrms and the dynamic range is 58.1 dB. The filter offers the best figure of merit of 2.91 x 10(-14) J, the lowest power consumption and voltage supply, compared with the previous state-of-the-art nanowatt filter designs.

Plný text v Digitální knihovně

BibTex


@article{BUT164646,
  author="Fabian {Khateb}",
  title="0.3-V Nanopower Biopotential Low-Pass Filter",
  annote="This paper presents a compact power-efficient CMOS fourth-order low-pass filter suitable for electrocardiogram (ECG) acquisition systems. The CMOS structure of the proposed filter utilize the bulkdriven technique and operates in subthreshold region to achieve extremely low-voltage supply (0.3V) and nanopower consumption (0.676 nW) for cut-off frequency of 100 Hz. The filter was designed and simulated using 0.18 mu m CMOS TSMC technology. The total input referred noise of the filter is 87 mu Vrms and the dynamic range is 58.1 dB. The filter offers the best figure of merit of 2.91 x 10(-14) J, the lowest power consumption and voltage supply, compared with the previous state-of-the-art nanowatt filter designs.",
  address="IEEE",
  chapter="164646",
  doi="10.1109/ACCESS.2020.3005715",
  howpublished="print",
  institution="IEEE",
  number="1, IF: 3.745",
  volume="8",
  year="2020",
  month="june",
  pages="119586--119593",
  publisher="IEEE",
  type="journal article in Web of Science"
}