Detail publikace

Multiple-input Bulk-driven Quasi-floating-gate MOS transistor for low-voltage low-power integrated circuits

Originální název

Multiple-input Bulk-driven Quasi-floating-gate MOS transistor for low-voltage low-power integrated circuits

Anglický název

Multiple-input Bulk-driven Quasi-floating-gate MOS transistor for low-voltage low-power integrated circuits

Jazyk

en

Originální abstrakt

This brief presents the first experimental results of the multiple-input bulk-driven quasi-floating-gate (MI-BD-QFG) MOS transistor (MOST) which is suitable for low-voltage (LV) low-power (LP) integrated circuits design. The MI-BD-QFG MOST is an extension to the principle of the bulk-driven quasi-floating-gate (BD-QFG) MOST. However, unlike the BD-QFG the MI-BD-QFG MOST offers multiple-input that simplifies specific CMOS topologies and reduce their power consumption. To confirm the advantages of the MI-BD-QFG MOST a Differential Difference Current Conveyor (DDCC) with very simple CMOS structure has been designed and fabricated in a standard n-well 0.18 µm CMOS process from TSMC with total chip area 350 µm x 78 µm. The fabricated circuit uses a 0.5 V power supply, consumes 1.7 µW power and offers near rail-to-rail input common mode range.

Anglický abstrakt

This brief presents the first experimental results of the multiple-input bulk-driven quasi-floating-gate (MI-BD-QFG) MOS transistor (MOST) which is suitable for low-voltage (LV) low-power (LP) integrated circuits design. The MI-BD-QFG MOST is an extension to the principle of the bulk-driven quasi-floating-gate (BD-QFG) MOST. However, unlike the BD-QFG the MI-BD-QFG MOST offers multiple-input that simplifies specific CMOS topologies and reduce their power consumption. To confirm the advantages of the MI-BD-QFG MOST a Differential Difference Current Conveyor (DDCC) with very simple CMOS structure has been designed and fabricated in a standard n-well 0.18 µm CMOS process from TSMC with total chip area 350 µm x 78 µm. The fabricated circuit uses a 0.5 V power supply, consumes 1.7 µW power and offers near rail-to-rail input common mode range.

BibTex


@article{BUT151919,
  author="Fabian {Khateb} and Tomasz {Kulej} and Harikrishna {Veldandi} and Winai {Jaikla}",
  title="Multiple-input Bulk-driven Quasi-floating-gate MOS transistor for low-voltage low-power integrated circuits",
  annote="This brief presents the first experimental results of the multiple-input bulk-driven quasi-floating-gate (MI-BD-QFG) MOS transistor (MOST) which is suitable for low-voltage (LV) low-power (LP) integrated circuits design. The MI-BD-QFG MOST is an extension to the principle of the bulk-driven quasi-floating-gate (BD-QFG) MOST. However, unlike the BD-QFG the MI-BD-QFG MOST offers multiple-input that simplifies specific CMOS topologies and reduce their power consumption. To confirm the advantages of the MI-BD-QFG MOST a Differential Difference Current Conveyor (DDCC) with very simple CMOS structure has been designed and fabricated in a standard n-well 0.18 µm CMOS process from TSMC with total chip area 350 µm x 78 µm. The fabricated circuit uses a 0.5 V power supply, consumes 1.7 µW power and offers near rail-to-rail input common mode range.",
  address="ELSEVIER GMBH, URBAN & FISCHER VERLAG",
  chapter="151919",
  doi="10.1016/j.aeue.2018.12.023",
  howpublished="print",
  institution="ELSEVIER GMBH, URBAN & FISCHER VERLAG",
  number=", IF: 2.853",
  volume="100",
  year="2019",
  month="january",
  pages="32--38",
  publisher="ELSEVIER GMBH, URBAN & FISCHER VERLAG",
  type="journal article in Web of Science"
}