Publication detail

Multiple-input Bulk-driven Quasi-floating-gate MOS transistor for low-voltage low-power integrated circuits

KHATEB, F. KULEJ, T. VELDANDI, H. JAIKLA, W.

Original Title

Multiple-input Bulk-driven Quasi-floating-gate MOS transistor for low-voltage low-power integrated circuits

Type

journal article in Web of Science

Language

English

Original Abstract

This brief presents the first experimental results of the multiple-input bulk-driven quasi-floating-gate (MI-BD-QFG) MOS transistor (MOST) which is suitable for low-voltage (LV) low-power (LP) integrated circuits design. The MI-BD-QFG MOST is an extension to the principle of the bulk-driven quasi-floating-gate (BD-QFG) MOST. However, unlike the BD-QFG the MI-BD-QFG MOST offers multiple-input that simplifies specific CMOS topologies and reduce their power consumption. To confirm the advantages of the MI-BD-QFG MOST a Differential Difference Current Conveyor (DDCC) with very simple CMOS structure has been designed and fabricated in a standard n-well 0.18 µm CMOS process from TSMC with total chip area 350 µm x 78 µm. The fabricated circuit uses a 0.5 V power supply, consumes 1.7 µW power and offers near rail-to-rail input common mode range.

Keywords

Bulk-driven; Quasi-floating-gate; Low-voltage low-power CMOS

Authors

KHATEB, F.; KULEJ, T.; VELDANDI, H.; JAIKLA, W.

Released

9. 1. 2019

Publisher

ELSEVIER GMBH, URBAN & FISCHER VERLAG

Location

Germany

ISBN

1434-8411

Periodical

AEU - International Journal of Electronics and Communications

Year of study

100

Number

, IF: 2.853

State

Federal Republic of Germany

Pages from

32

Pages to

38

Pages count

7

URL

https://doi.org/10.1016/j.aeue.2018.12.023

BibTex

@article{BUT151919,
  author="Fabian {Khateb} and Tomasz {Kulej} and Harikrishna {Veldandi} and Winai {Jaikla}",
  title="Multiple-input Bulk-driven Quasi-floating-gate MOS transistor for low-voltage low-power integrated circuits",
  journal="AEU - International Journal of Electronics and Communications",
  year="2019",
  volume="100",
  number=", IF: 2.853",
  pages="32--38",
  doi="10.1016/j.aeue.2018.12.023",
  issn="1434-8411",
  url="https://doi.org/10.1016/j.aeue.2018.12.023"
}