Detail publikace

Stress-free deposition of [001] preferentially oriented titanium thin film by Kaufman ion-beam source

GABLECH, I. CAHA, O. SVATOŠ, V. PEKÁREK, J. NEUŽIL, P. ŠIKOLA, T.

Originální název

Stress-free deposition of [001] preferentially oriented titanium thin film by Kaufman ion-beam source

Anglický název

Stress-free deposition of [001] preferentially oriented titanium thin film by Kaufman ion-beam source

Jazyk

en

Originální abstrakt

We proposed a method to control and minimize residual stress in [001] preferentially oriented Ti thin films deposited by a Kaufman ion-beam source using a substrate temperature during deposition (T) as the parameter. We determined the residual stress, corresponding lattice parameters, and thickness of deposited films using x-ray diffraction and x-ray reflectivity measurements. We showed that the Ti film deposited at T ≈273 °C was stress-free with corresponding lattice parameters a0 and c0 of (2.954 ± 0.003) Å and (4.695 ± 0.001) Å, respectively. The stress-free sample has the superior crystallographic quality and pure [001] orientation. The Ti thin films were oriented with the c–axis parallel to the surface normal. We also investigated root mean square of surface roughness of deposited films by atomic force microscopy and it was in the range from ≈0.58 nm to ≈0.71 nm. Such smooth and stress-free layers are suitable for microelectromechanical systems.

Anglický abstrakt

We proposed a method to control and minimize residual stress in [001] preferentially oriented Ti thin films deposited by a Kaufman ion-beam source using a substrate temperature during deposition (T) as the parameter. We determined the residual stress, corresponding lattice parameters, and thickness of deposited films using x-ray diffraction and x-ray reflectivity measurements. We showed that the Ti film deposited at T ≈273 °C was stress-free with corresponding lattice parameters a0 and c0 of (2.954 ± 0.003) Å and (4.695 ± 0.001) Å, respectively. The stress-free sample has the superior crystallographic quality and pure [001] orientation. The Ti thin films were oriented with the c–axis parallel to the surface normal. We also investigated root mean square of surface roughness of deposited films by atomic force microscopy and it was in the range from ≈0.58 nm to ≈0.71 nm. Such smooth and stress-free layers are suitable for microelectromechanical systems.

Dokumenty

BibTex


@article{BUT137801,
  author="Imrich {Gablech} and Ondřej {Caha} and Vojtěch {Svatoš} and Jan {Pekárek} and Pavel {Neužil} and Tomáš {Šikola}",
  title="Stress-free deposition of [001] preferentially oriented titanium thin film by Kaufman ion-beam source",
  annote="We proposed a method to control and minimize residual stress in [001] preferentially oriented Ti thin films deposited by a Kaufman ion-beam source using a substrate temperature during deposition (T) as the parameter. We determined the residual stress, corresponding lattice parameters, and thickness of deposited films using x-ray diffraction and x-ray reflectivity measurements. We showed that the Ti film deposited at T ≈273 °C was stress-free with corresponding lattice parameters a0 and c0 of (2.954 ± 0.003) Å and (4.695 ± 0.001) Å, respectively. The stress-free sample has the superior crystallographic quality and pure [001] orientation. The Ti thin films were oriented with the c–axis parallel to the surface normal. We also investigated root mean square of surface roughness of deposited films by atomic force microscopy and it was in the range from ≈0.58 nm to ≈0.71 nm. Such smooth and stress-free layers are suitable for microelectromechanical systems.",
  address="ELSEVIER SCIENCE SA",
  chapter="137801",
  doi="10.1016/j.tsf.2017.07.039",
  howpublished="online",
  institution="ELSEVIER SCIENCE SA",
  number="NA",
  volume="638",
  year="2017",
  month="september",
  pages="57--62",
  publisher="ELSEVIER SCIENCE SA",
  type="journal article in Web of Science"
}