Detail publikace

Automatic tuning circuit for bulk-controlled sub-threshold MOS resistors

Originální název

Automatic tuning circuit for bulk-controlled sub-threshold MOS resistors

Anglický název

Automatic tuning circuit for bulk-controlled sub-threshold MOS resistors

Jazyk

en

Originální abstrakt

In this letter, a simple automatic tuning circuit is proposed which is suitable for controlling the very large channel resistance of weak-inverted transistors operated in the linear regime. The channel resistance for 1.2Mohm nominal value presents about +-0.6% variation for -20C to 80C temperature range, +-5% variation at process/temperature (P/T) corners and THD=-42dB for differential signals. The supply voltage was VDD=1V and the current consumption about 470nA. The proposed concept and the performance were confirmed and evaluated by simulations using standard 0.35um CMOS process.

Anglický abstrakt

In this letter, a simple automatic tuning circuit is proposed which is suitable for controlling the very large channel resistance of weak-inverted transistors operated in the linear regime. The channel resistance for 1.2Mohm nominal value presents about +-0.6% variation for -20C to 80C temperature range, +-5% variation at process/temperature (P/T) corners and THD=-42dB for differential signals. The supply voltage was VDD=1V and the current consumption about 470nA. The proposed concept and the performance were confirmed and evaluated by simulations using standard 0.35um CMOS process.

BibTex


@article{BUT105722,
  author="Spyridon {Vlassis} and Fabian {Khateb}",
  title="Automatic tuning circuit for bulk-controlled sub-threshold MOS resistors",
  annote="In this letter, a simple automatic tuning circuit is proposed which is suitable for controlling the very large channel resistance of weak-inverted transistors operated in the linear regime. The channel resistance for 1.2Mohm nominal value presents about +-0.6% variation for -20C to 80C temperature range, +-5% variation at process/temperature (P/T) corners and THD=-42dB for differential signals. The supply voltage was VDD=1V and the current consumption about 470nA. The proposed concept and the performance were confirmed and evaluated by simulations using standard 0.35um CMOS process.",
  chapter="105722",
  doi="10.1049/el.2013.4181",
  number="6, IF: 1.068",
  volume="2014 (50)",
  year="2014",
  month="march",
  pages="432--434",
  type="journal article in Web of Science"
}