Detail publikace

Wire-Bonds Durability in High-Temperature Applications

Originální název

Wire-Bonds Durability in High-Temperature Applications

Anglický název

Wire-Bonds Durability in High-Temperature Applications

Jazyk

en

Originální abstrakt

This work aims to determine the suitability of use of low-temperature co-fired ceramics (LTCC) and thick film technology in applications with semiconductors based on SiC and GaN, which have high operating temperature. Especially, Heraeus HeraLock 2000 substrate is investigated. The paper is mainly focused on the behaviour and reliability of wire-bonds, which are used for connection of the above-mentioned semiconducting devices with a circuit or a package. A test sample was designed for this purpose, which was subjected to thermal load. Subsequently, changes in the bonds resistivity were studied, together with their strength and any defects caused by the thermal load. Other properties, such as termomechanical stress of the material for different temperature profiles were simulated in the ANSYS software. Created mathematical model simulated and compared differences between gold and aluminium wire-bond.

Anglický abstrakt

This work aims to determine the suitability of use of low-temperature co-fired ceramics (LTCC) and thick film technology in applications with semiconductors based on SiC and GaN, which have high operating temperature. Especially, Heraeus HeraLock 2000 substrate is investigated. The paper is mainly focused on the behaviour and reliability of wire-bonds, which are used for connection of the above-mentioned semiconducting devices with a circuit or a package. A test sample was designed for this purpose, which was subjected to thermal load. Subsequently, changes in the bonds resistivity were studied, together with their strength and any defects caused by the thermal load. Other properties, such as termomechanical stress of the material for different temperature profiles were simulated in the ANSYS software. Created mathematical model simulated and compared differences between gold and aluminium wire-bond.

BibTex


@article{BUT104704,
  author="Martin {Klíma} and Boleslav {Psota} and Ivan {Szendiuch}",
  title="Wire-Bonds Durability in High-Temperature Applications",
  annote="This work aims to determine the suitability of use of low-temperature co-fired ceramics (LTCC) and thick film technology in applications with semiconductors based on SiC and GaN, which have high operating temperature. Especially, Heraeus HeraLock 2000 substrate is investigated. The paper is mainly focused on the behaviour and reliability of wire-bonds, which are used for connection of the above-mentioned semiconducting devices with a circuit or a package. A test sample was designed for this purpose, which was subjected to thermal load. Subsequently, changes in the bonds resistivity were studied, together with their strength and any defects caused by the thermal load. Other properties, such as termomechanical stress of the material for different temperature profiles were simulated in the ANSYS software. Created mathematical model simulated and compared differences between gold and aluminium wire-bond.",
  chapter="104704",
  number="5",
  volume="2013",
  year="2013",
  month="november",
  pages="7--11",
  type="journal article - other"
}