Detail publikace

Direct tunneling through thin gate oxides

RECMAN, M.

Originální název

Direct tunneling through thin gate oxides

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

As the NMOSFET channel length continues to shrink and so does the gate oxide thickness, the dominant component of the leakage current through the gate oxide becomes the charge-carrier direct tunneling from the channel and source-drain extensions into the polygate. The contribution deals with TCAD simulation of this tunneling current in the NMOSFET structures with gate oxide thicknesses below 20 A. The 2D NMOS transistor structure is generated using ISE TCAD tools DIOS and MDRAW. DESSIS simulates gate leakage current due to direct electron tunneling through the gate oxide and INSPECT generates and compares I-V plots for 7 different simulation runs. The individual simulations are run under GENESISe.

Klíčová slova

2D, MOSFET, Gate current, Direct tunneling, Device simulation, Device modeling, Short-channel effect, Leakage currents, MOS structure creation

Autoři

RECMAN, M.

Rok RIV

2007

Vydáno

1. 1. 2007

Nakladatel

Nakl. Novotný

Místo

Brno

ISBN

978-80-214-3470-7

Kniha

Proceedings of Electronic Devices and Systems EDS`07 IMAPS CS International Conference 2007

Strany od

159

Strany do

163

Strany počet

5

BibTex

@inproceedings{BUT25394,
  author="Milan {Recman}",
  title="Direct tunneling through thin gate oxides",
  booktitle="Proceedings of Electronic Devices and Systems EDS`07 IMAPS CS International Conference 2007",
  year="2007",
  pages="5",
  publisher="Nakl. Novotný",
  address="Brno",
  isbn="978-80-214-3470-7"
}