Publication detail

Direct tunneling through thin gate oxides

RECMAN, M.

Original Title

Direct tunneling through thin gate oxides

English Title

Direct tunneling through thin gate oxides

Type

conference paper

Language

en

Original Abstract

As the NMOSFET channel length continues to shrink and so does the gate oxide thickness, the dominant component of the leakage current through the gate oxide becomes the charge-carrier direct tunneling from the channel and source-drain extensions into the polygate. The contribution deals with TCAD simulation of this tunneling current in the NMOSFET structures with gate oxide thicknesses below 20 A. The 2D NMOS transistor structure is generated using ISE TCAD tools DIOS and MDRAW. DESSIS simulates gate leakage current due to direct electron tunneling through the gate oxide and INSPECT generates and compares I-V plots for 7 different simulation runs. The individual simulations are run under GENESISe.

English abstract

As the NMOSFET channel length continues to shrink and so does the gate oxide thickness, the dominant component of the leakage current through the gate oxide becomes the charge-carrier direct tunneling from the channel and source-drain extensions into the polygate. The contribution deals with TCAD simulation of this tunneling current in the NMOSFET structures with gate oxide thicknesses below 20 A. The 2D NMOS transistor structure is generated using ISE TCAD tools DIOS and MDRAW. DESSIS simulates gate leakage current due to direct electron tunneling through the gate oxide and INSPECT generates and compares I-V plots for 7 different simulation runs. The individual simulations are run under GENESISe.

Keywords

2D, MOSFET, Gate current, Direct tunneling, Device simulation, Device modeling, Short-channel effect, Leakage currents, MOS structure creation

RIV year

2007

Released

01.01.2007

Publisher

Nakl. Novotný

Location

Brno

ISBN

978-80-214-3470-7

Book

Proceedings of Electronic Devices and Systems EDS`07 IMAPS CS International Conference 2007

Pages from

159

Pages to

163

Pages count

5

BibTex


@inproceedings{BUT25394,
  author="Milan {Recman}",
  title="Direct tunneling through thin gate oxides",
  annote="As the NMOSFET channel length continues to shrink and so does the gate oxide thickness, the dominant component of the leakage current through the gate oxide becomes the charge-carrier direct tunneling from the channel and source-drain extensions into the polygate. The contribution deals with TCAD simulation of this tunneling current in the NMOSFET structures with gate oxide thicknesses below 20 A. The 2D NMOS transistor structure is generated using ISE TCAD tools DIOS and MDRAW. DESSIS simulates gate leakage current due to direct electron tunneling through the gate oxide and INSPECT generates and compares I-V plots for 7 different simulation runs. The individual simulations are run under GENESISe.",
  address="Nakl. Novotný",
  booktitle="Proceedings of Electronic Devices and Systems EDS`07 IMAPS CS International Conference 2007",
  chapter="25394",
  institution="Nakl. Novotný",
  year="2007",
  month="january",
  pages="159",
  publisher="Nakl. Novotný",
  type="conference paper"
}