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Publication detail
RECMAN, M.
Original Title
Direct tunneling through thin gate oxides
Type
conference paper
Language
English
Original Abstract
As the NMOSFET channel length continues to shrink and so does the gate oxide thickness, the dominant component of the leakage current through the gate oxide becomes the charge-carrier direct tunneling from the channel and source-drain extensions into the polygate. The contribution deals with TCAD simulation of this tunneling current in the NMOSFET structures with gate oxide thicknesses below 20 A. The 2D NMOS transistor structure is generated using ISE TCAD tools DIOS and MDRAW. DESSIS simulates gate leakage current due to direct electron tunneling through the gate oxide and INSPECT generates and compares I-V plots for 7 different simulation runs. The individual simulations are run under GENESISe.
Keywords
2D, MOSFET, Gate current, Direct tunneling, Device simulation, Device modeling, Short-channel effect, Leakage currents, MOS structure creation
Authors
RIV year
2007
Released
1. 1. 2007
Publisher
Nakl. Novotný
Location
Brno
ISBN
978-80-214-3470-7
Book
Proceedings of Electronic Devices and Systems EDS`07 IMAPS CS International Conference 2007
Pages from
159
Pages to
163
Pages count
5
BibTex
@inproceedings{BUT25394, author="Milan {Recman}", title="Direct tunneling through thin gate oxides", booktitle="Proceedings of Electronic Devices and Systems EDS`07 IMAPS CS International Conference 2007", year="2007", pages="5", publisher="Nakl. Novotný", address="Brno", isbn="978-80-214-3470-7" }