Detail publikace

C-V Characterization of Nonlinear Capacitors Using CBCM Method

Originální název

C-V Characterization of Nonlinear Capacitors Using CBCM Method

Anglický název

C-V Characterization of Nonlinear Capacitors Using CBCM Method

Jazyk

en

Originální abstrakt

The paper deals with a modification of CBCM (Charge-Based Capacitance Measurements) for nonlinear capacitance characterization. The method is characterized by high resolution although it is based on equipment found in any average laboratory. CBCM was originally developed for linear interconnect measurements. The proposed modification uses two DC swept sources to measure the whole nonlinear Q-v characteristic in both polarities without the necessity to switch the measured object. A test-chip implementing the method was designed and manufactured in 0.35μm CMOS process. Verification against known capacitances proved the method correctness and accuracy. It was successfully used for MOSCAPs characterization in full operating voltage range.

Anglický abstrakt

The paper deals with a modification of CBCM (Charge-Based Capacitance Measurements) for nonlinear capacitance characterization. The method is characterized by high resolution although it is based on equipment found in any average laboratory. CBCM was originally developed for linear interconnect measurements. The proposed modification uses two DC swept sources to measure the whole nonlinear Q-v characteristic in both polarities without the necessity to switch the measured object. A test-chip implementing the method was designed and manufactured in 0.35μm CMOS process. Verification against known capacitances proved the method correctness and accuracy. It was successfully used for MOSCAPs characterization in full operating voltage range.

BibTex


@inproceedings{BUT23667,
  author="Tomáš {Sutorý} and Zdeněk {Kolka}",
  title="C-V Characterization of Nonlinear Capacitors Using CBCM Method",
  annote="The paper deals with a modification of CBCM (Charge-Based Capacitance Measurements) for nonlinear
capacitance characterization. The method is characterized by high resolution although it is based on equipment found in
any average laboratory. CBCM was originally developed for linear interconnect measurements. The proposed modification
uses two DC swept sources to measure the whole nonlinear Q-v characteristic in both polarities without the necessity to
switch the measured object. A test-chip implementing the method was designed and manufactured in 0.35μm CMOS
process. Verification against known capacitances proved the method correctness and accuracy. It was successfully used for
MOSCAPs characterization in full operating voltage range.",
  address="Technical University of Lodz",
  booktitle="Proceedings of the 14th International Conference Mixed Design of Integrated Circuits and Systems 2007",
  chapter="23667",
  institution="Technical University of Lodz",
  year="2007",
  month="june",
  pages="501",
  publisher="Technical University of Lodz",
  type="conference paper"
}