Detail publikace

RTS noise in submicron MOSFETs

Martin Bláha

Originální název

RTS noise in submicron MOSFETs

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

In the present paper, Im show processing of RTS noise in submicron MOSFET. The measure data from MOSFET tranzistor we process in program Easy Plot and Matlab and we compare this two method. From shape of curve we obtain time t1, t2 and t0. This measure and elaborated data help us with be under way near physical process in MOSFET tranzistor.

Klíčová slova

RTS, MOSFETs, matlab, easyplot, time domain

Autoři

Martin Bláha

Rok RIV

2005

Vydáno

15. 9. 2005

Místo

Brno

ISBN

80-214-2990-9

Kniha

EDS '05 imaps cs international conference proceedings

Strany od

189

Strany do

193

Strany počet

5

BibTex

@inproceedings{BUT15192,
  author="Martin {Bláha}",
  title="RTS noise in submicron MOSFETs",
  booktitle="EDS '05 imaps cs international conference proceedings",
  year="2005",
  pages="5",
  address="Brno",
  isbn="80-214-2990-9"
}