Publication detail

RTS noise in submicron MOSFETs

Martin Bláha

Original Title

RTS noise in submicron MOSFETs

English Title

RTS noise in submicron MOSFETs

Type

conference paper

Language

en

Original Abstract

In the present paper, Im show processing of RTS noise in submicron MOSFET. The measure data from MOSFET tranzistor we process in program Easy Plot and Matlab and we compare this two method. From shape of curve we obtain time t1, t2 and t0. This measure and elaborated data help us with be under way near physical process in MOSFET tranzistor.

English abstract

In the present paper, Im show processing of RTS noise in submicron MOSFET. The measure data from MOSFET tranzistor we process in program Easy Plot and Matlab and we compare this two method. From shape of curve we obtain time t1, t2 and t0. This measure and elaborated data help us with be under way near physical process in MOSFET tranzistor.

Keywords

RTS, MOSFETs, matlab, easyplot, time domain

RIV year

2005

Released

15.09.2005

Location

Brno

ISBN

80-214-2990-9

Book

EDS '05 imaps cs international conference proceedings

Pages from

189

Pages to

193

Pages count

5

BibTex


@inproceedings{BUT15192,
  author="Martin {Bláha}",
  title="RTS noise in submicron MOSFETs",
  annote="In the present paper, Im show processing of RTS noise in submicron MOSFET. The measure data from MOSFET tranzistor we process in program Easy Plot and Matlab and we compare this two method. From shape of curve we obtain time t1, t2 and t0. This measure and elaborated data help us with be under way near physical process in MOSFET tranzistor.",
  booktitle="EDS '05 imaps cs international conference proceedings",
  chapter="15192",
  year="2005",
  month="september",
  pages="189",
  type="conference paper"
}