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Original title in Czech: Fyzikální elektronika a nanotechnologieFEKTAbbreviation: PP-FENAcad. year: 2010/2011
Programme: Electrical Engineering and Communication
Length of Study: 4 years
Profile
The objective of the study is to provide PhD education to MSc graduates in all partial fields and to create a cross-disciplinary overview of the present development, to develop theoretical foundations in the selected research area, to master the methods of scientific, to develop their creative abilities and to use them for the solution of research problems. This all should lead to a dissertation thesis, which will provide an original a significant contribution to the research status in the field of interest.
Key learning outcomes
Graduates of this program will acquire cross-disciplinary knowledge of and experience in technical and physical subjects on a high-quality theoretical level. Graduates are for their later independent research and development work equipped with the knowledge and experience from, in particular, physics of semiconductors, quantum electronics and mathematical modeling and will be able to independently solve problems associated with nanotechnologies. Potential job careers: research worker in basic or applied research and in the introduction, implementation and application of new prospective and economically beneficial procedures and processes in the field of electronics, electrical engineering, non-destructive testing and reliability and material analysis.
Occupational profiles of graduates with examples
Graduates of this program will acquire cross-disciplinary knowledge of and experience in technical and physical subjects on a high-quality theoretical level. Graduates are for their later independent research and development work equipped with the knowledge and experience from, in particular, physics of semiconductors, quantum electronics and mathematical modeling and will be able to independently solve problems associated with nanotechnologies. Potential job careers: research worker in basic or applied research and in the introduction, implementation and application of new prospective and economically beneficial procedures and processes in the field of electronics, electrical engineering, non-destructive testing and reliability and material analysis
Guarantor
prof. RNDr. Pavel Tománek, CSc.
Issued topics of Doctoral Study Program
An important role in many plasma processing devices plays the radiative heat transport. The experimental investigation is very difficult, therefore, mathematical modeling is of great imporatnce. The knowledge of absorption properties of the plasma is necessary for succesfulI theoretical modeling. The aim of this disertation work is to collect atomic and molecular data which will serve as input data for calculation of absroption coefficients of selected plasmas. It concerns searching of data in available web databases, their computer processing, and creation of own databases in the form of input files for further calculations.
Tutor: Bartlová Milada, doc. RNDr., Ph.D.
The main problem during semiconductor materials and devices defects diagnostics is to find their basic parameters. A lot of methods exist for this purpose but they often give different results. The goal of the work will be research of advanced modern methods for important parameters finding for example impact ionization coefficients or impurities concentration profiles in PN junctions and others. Obtained results will be used for these parameters measuring for some materials (Si, GaAsP) and devices (silicon solar cells, semiconductor diodes).
Tutor: Koktavý Pavel, prof. Ing., CSc. Ph.D.
o study energy spectra of nanostructures and nanodevices such as QD and QW and to gain new pieces of knowledge by solving the Schroedinger equation with suitable boundary conditions. The aim is to summarize existing computer procedures and submitt their refined versions. Application of Matlab PDE toolbox and FEM method is assumed.
Tutor: Hruška Pavel, doc. RNDr., CSc.
Materials exhibiting high permittivity (dielectric constant, k) are needed for new applications, particularly in integrated circuits (ICs) using the 32 nm technology and in capacitors. In capacitors, high-k dielectrics are used in order to attain higher energy densities in capacitors and thus to reduce the size of capacitors themselves. In ICs manufacturing, the present drive toward smaller dimensions results in the thinning of insulating layers, accompanied by an unwanted increase of leakage currents. In order to prevent this effect, higher gate thicknesses are desired which, however, because of the necessity to keep the capacitance constant, should exhibit higher dielectric constant than the pure SiO2. Materials for ICs should be used within the current silicon technologies and, therefore, they must be able to sustain all manufacturing steps without being damaged. Suitable dielectrics are mostly noble metal oxides, e.g. ZrO_2, HfO_2, Al_2O_3, Y_2O_3, La_2O_3, Ta_2O_5 etc. Moreover, all materials considered must be thermodynamically stable on silicon for a long time. In case of dielectrics for capacitors, the use of multilayer ceramic chip capacitors again necessitates the use of material that can withstand sintering temperatures. The work on this topic will require experimental work in sample preparation and design, studies of the theory of high -k dielectrics and the measurement of electrical properties of developed material systems. What is available: measurement equipment for the frequency range 10-3 - 109 Hz and the helium cryostat for the temperature range 10 - 500 K.
Tutor: Liedermann Karel, doc. Ing., CSc.
The present level of environmental protection as well as current efforts to replace crude oil products by agricultural products exert a strong pressure upon insulating oils used in electrical engineering. The main requirement is improved biodegradability while preserving the standard properties as high breakdown strength, high resistivity, low permittivity, long-term stability as well as low price. These requirements can be met by vegetable oils (e.g. line-seed or rapeseed oils), mostly methyl-esters or ethyl-esters, sometimes also triglycerides or their synthetically manufactured relatives. In some cases, a suitable substitute may also be motor and industrial oils. The subject of the study will be dielectric properties of vegetable oils intended for the use in power engineering. Studies should be focused to the impact of a particular chemical structure onto their electrical properties and to their applicability at low temperatures. The work on this topic will require experimental work in sample preparation and design and theoretical studies and measurement of electrical properties of analyzed material systems. What is available: measurement equipment for the frequency range 10-3 - 109 Hz and the helium cryostat for the temperature range 10 - 500 K.
The aim of this dissertation work is investigation of the properties and behavior of surface oxide layers on noble metals in field-emission cathodes. These cathodes come to be more used now, as they offer, in comparison with classic thermionic cathodes, a number of advantages. They feature, among else, much higher emission current densities. The performance of field-emission cathodes is significantly affected by the presence of oxide layers that are formed in the process of anodic oxidation of cathode tips. In our research, we would like to investigate the origin of the noise in emission current in relation to the reliability of field-emission cathodes. The scope of analysis comprises the study of various factors affecting the behavior of field-emission cathodes. Included in the thesis are studies of potential candidate noble metals for field-emission cathodes, studies of methods for the prevention of oxide layer growth as well as studies of possible modifications of manufacturing technologies.
Tutor: Grmela Lubomír, prof. Ing., CSc.
Research will be based on literature retrieval of nanostructure (like QD, QW) and surroundings interfaces analyzed. The type of transport across the interface will be specified (to be resonant tunnelling or hopping mechanism or Landauer-type mechanism, etc) and a computer simulation developed. The target will be the I=I(U) curve determination, with the use of material and nanostructure parameters.
The objectives of the work consist in a formulation of physical principle model of electro-ultrasonic spectroscopy and in an analysis of correlation between results of electro-ultrasonic spectroscopy and electromagnetic emission. and electro-ultrasonic spectroscopy. Special attention will be paid to experimental study of rock samples.
Tutor: Sedlák Petr, doc. Ing., Ph.D.
The aim of this work is the study of charge carriers transport in tantalum pentoxide nanolayers, which are used e.g. as dielectric layers in tantalum capacitors. Basic parameter for the capacitor quality and reliability evaluation is the leakage current flowing through the oxide layer. The leakage current measurement will be realized on the samples of planar structures and on tantalum capacitors. Basic mechanisms of charge carrier transport in oxide layers will be determined for different values of electric field.
Tutor: Sedláková Vlasta, doc. Ing., Ph.D.
The subject of the research will be electrical properties of nanocomposites for electrical insulation. Nanocomposites materials are based on epoxy resins containing finely dispersed both microfiller and nanofiller particles of SiO_2 and TiO_2. The presence of nanoparticles with dimensions of some 10 - 20 nm favourably affects the withstand capability of nanocomposites to partial discharges and electrical treeing and, hence, the breakdown strength as well as the degradation resistance. This in turn brings the possibility to manufacture electrical equipment (e.g. switchgear, vacuum interrupters) with smaller dimensions and weight and improved reliability. The work on this topic will include experimental work in sample preparation and design, studies of the relation between microphysical structure and electrical properties and the measurement of electrical properties of developed material systems. What is available: measurement equipment for the frequency range 1E-3 - 1E9 Hz and the helium cryostat for the temperature range 10 - 500 K, as well as established software for measurement control.
Nondestructive diagnostics and local characterization of optoelectronic devices. Study of characteristics of opto-electronic devices in the near-field.
Tutor: Tománek Pavel, prof. RNDr., CSc.
The aim of this dissertation work is investigation of the resistance FET transistors and adsorption molecules.
Sensors based on Quartz Crystal Microbalances (QCM) are containing various sorption layers with affinity to the molecules of detected matter. Sorbed matter (molecules) presents mass increment and the change of the viscoelastic properties of the layer, which leads to the change of resonant frequency. The basis of QCM chemical sensors is a piezoelectric quartz crystal which oscillates at a resonant frequency determined by the mass of the crystal and several other factors like geometry, temperature etc. The aims of the work are two-fold: to study theoretically and experimentally fluctuation processes in piezoelectric sensors, and to optimize a design of QCM sensors in order to get a maximal sensitivity.
Radiation energy transfer influences significantly physical processes occuring in the plasma, it plays important role in many devices in plasma processing devices. Electric arc plasmas are utilized in number of industrial applications, e.g. in plasma metallurgy, waste treatment, plasma cutting, welding or spraying. The goal of the work is to solve the equation of radiation transfer by means of the approximate method of discrete ordinates (SN-approximation), to compare the obtained results of radiation energy and radiation flux for selected kinds of plasmas with known results obtained by other approximate methods (method of partial characteristics, diffusion approximation), to discuss availability of different approximate methods.
The aim of this project is to determine parameters of traps in insulation layer of submicron MOSFETs by analysis of its noise characteristics, mainly RTS (random telegraph signal) noise. Experimental work is based on measurement of temperature dependence of noise using helium cryostat and study of amplitude and mean time of capture and emission as a function of electric field intensity and charge carrier concentration in channel. These results will be used to improve generation-recombination model of noise origin and localization of traps.
Tutor: Pavelka Jan, doc. Mgr., CSc. Ph.D.
Cracks creation in mechanical loaded solids is accompanied by origin of electromagnetic (EME) and acoustic (AE) signals. These signals may be used for study of cracks formation evolution, their characteristics finding and their localization. EME and AE methods are usable in electrical engineering, mechanical engineering, civil engineering or in geophysics. The goal will be determination of cracks primary parameters and their localization in concrete, granite and in modern composite materials for structural applications. Analysis of EME and AE signals origin and propagation will be performed in these materials and models will be suggested. The methodology for determination of selected primary parameters and cracks localization will be suggested and verified.
Decreasing the dimensions in integrated circuits (currently 32 nm) brings about an increase of interconnect capacitance and thus the reduction of the signal propagation speed. The limiting factor for a further improvement of electronic device performance thus become not the properties of semiconductor devices themselves but rather interconnect delays and, hence, too high magnitudes of parasitic capacitances. One of the options for the reduction of interconnect capacitances is the reduction of the permittivity (dielectric constant, k) of thin-layer insulating layers (capacitance is directly proportional to permitivity). Two major routes are available: replacement of polar Si-O bonds with less polar Si-F or Si-C bonds or raising the porosity (intentional introduction of air voids). The newly developed low-k materials must, however, not limit the currently used silicon technologies and must be able to pass all manufacturing steps (temperatures up to about 1100°C). The work on this topic will require experimental work in sample preparation and design, studies of the theory of low-k dielectrics and the measurement of electrical properties of developed material systems. What is available: measurement equipment for the frequency range 10-3 - 109 Hz and the helium cryostat for the temperature range 10 - 500 K.
The aim of this work is the study of electronic noise and charge carrier transport in niobium pentoxide nanolayers. Thin films of high dielectric permittivity have potential application e.g. in integrated capacitors for dynamic memories or as gate insulators in thin film transistors. Basic parameter for the quality and reliability evaluation is the leakage current flowing through the oxide layer. The leakage current measurement will be realized on the samples of planar structures and on niobium-oxide capacitors. The correlation between the leakage current value and low frequency noise will be evaluated for different values of electric field.
Study of structural and optical models of tissues with single and multiple scattering with ordered and randomly distributed scatterers. Study of polarization states of forward and backward scattered light.
Acoustic emission (AE) is physical phenomenon, when transient elastic waves are generated by the rapid release of energy in a material under mechanical or thermal stress. Thus, AE signal contains useful information about material behavior, which can be helpful for monitoring in civil and aircraft engineering as well as in material engineering. Great attention is paid to identification of AE events, which have connection with crack creations, in the presence of strong time varying noise and other external interferences. Event parameters may identify acoustic emission sources, that are important for behavior study of new materials. The aim of the work consist in a design of new approaches based on artificial intelligence methods for AE signal analysis to simplify characterization of AE sources.