The objective of the study is to provide PhD education to MSc graduates in all partial fields and to create a cross-disciplinary overview of the present development, to develop theoretical foundations in the selected research area, to master the methods of scientific, to develop their creative abilities and to use them for the solution of research problems. This all should lead to a dissertation thesis, which will provide an original a significant contribution to the research status in the field of interest.

Graduates of this program will acquire cross-disciplinary knowledge of and experience in technical and physical subjects on a high-quality theoretical level. Graduates are for their later independent research and development work equipped with the knowledge and experience from, in particular, physics of semiconductors, quantum electronics and mathematical modeling and will be able to independently solve problems associated with nanotechnologies. Potential job careers: research worker in basic or applied research and in the introduction, implementation and application of new prospective and economically beneficial procedures and processes in the field of electronics, electrical engineering, non-destructive testing and reliability and material analysis.

Graduates of this program will acquire cross-disciplinary knowledge of and experience in technical and physical subjects on a high-quality theoretical level. Graduates are for their later independent research and development work equipped with the knowledge and experience from, in particular, physics of semiconductors, quantum electronics and mathematical modeling and will be able to independently solve problems associated with nanotechnologies. Potential job careers: research worker in basic or applied research and in the introduction, implementation and application of new prospective and economically beneficial procedures and processes in the field of electronics, electrical engineering, non-destructive testing and reliability and material analysis

prof. RNDr. Pavel Tománek, CSc.

1. Electronic nose based on analysis of current fluctuations

   Thesis deals with a study of elctronic noise in order to develop a non-traditional technique for evaluation of output sensor signal considering direct component and also its fluctuation. Due to stochastic nature of the matter, physical processes in materials are considered to be stochastic, and they reveal as fluctuation of measurable quantities macroscopically, i.e noise. Motivation is not only increase of selectivity and sensitivity but also possibility of electronic noise development. The aim is to analyze dependencies of these fluctuations on input quantity by measurements of noise characteristics (spectral density of noise current) and transport characteristics.

   Tutor: Sedlák Petr, doc. Ing., Ph.D.

2. Study of dielectric and insulating materials with high permittivity, based on titanate ceramics

   The objective of the research is the investigation of electrical properties of CCTO ceramics (i.e., based on CaCu3Ti4O12), doped with transition metals and lanthanides. Attention will be focused toward the identification of mechanisms leading to high dielectric constant (permittivity) of the order 10^4 – 10^5 and, subsequently, on the modification of CCTO ceramics formulation in order to reduce dielectric loss and to extend the frequency interval, in which the dielectric constant retains its high value, up to the GHz range

   Tutor: Liedermann Karel, doc. Ing., CSc.

3. Study of dielectric and insulating materials with low permittivity

   Decreasing the dimensions in integrated circuits (currently 32 nm) brings about an increase of interconnect capacitance and thus the reduction of the signal propagation speed. The limiting factor for a further improvement of electronic device performance thus become not the properties of semiconductor devices themselves but rather interconnect delays and, hence, too, high magnitudes of parasitic capacitances. One of the options for the reduction of interconnect capacitances is the reduction of the permittivity (dielectric constant, k) of thin-layer insulating layers (capacitance is directly proportional to permitivity). Two major paths are available: replacement of polar Si-O bonds with less polar Si-F or Si-C bonds or raising the porosity (intentional introduction of air voids). The newly developed low-k materials must, however, not limit the currently used silicon technologies and must be able to pass all manufacturing steps (temperatures up to about 1100 °C).

   Tutor: Liedermann Karel, doc. Ing., CSc.