Czech

3

Not applicable.

The subject knowledge on the secondary school level is required.

Proffesional excercises: 30 points; minimum 20 points.
Final exam: 70 points; minimum 30 points.
Lectures. Professional exercises.

Introduce students to electronic devices and their applications and to the basic terminology in English as well as Czech.
Based on the knowledge gained in lectures and exercises and their verification in a written exam, the student is able to:
Describe in detail the mechanisms that act on the PN junction in the equilibrium state and in the forward voltage bias and in reverse voltage bias.
Define the barrier and diffusion capacity of the PN junction.
Explain the Shockley equation of the current voltage characteristic of the PN junction.
Explain the operation of the PN junction in the circuit connection of the rectifier, voltage stabilizer, variable capacitance diode, photodiode, luminescent diode, controlled differential resistance and diode switch.
Describe the structure of a bipolar junction transistor (BJT) and explain its operation.
Design and analyze a class A amplifier with BJT and a switch with BJT.
Describe the structure of unipolar transistor J-FET and explain its operation.
Describe the structure of unipolar transistor IGFET and explain its operation.
Design and analyze a class A amplifier with unipolar transistors and a switch with unipolar transistors.
Describe the structure of the thyristor and explain its operation on the substitution scheme.
Describe the properties of a triac and explain its use.
Define the principle of phase control of power-switching devices.
Describe the mechanisms of the interaction of radiation with a solid.
Define photometric and radiometric quantities.
Describe the arrangement of lasers and justify the benefits of their use.

Not applicable.

Not applicable.

BOYLESTAD, Robert L. a Louis NASHELSKY. Electronic devices and circuit theory. 8th ed. Upper Saddle River: Prentice Hall, 2002. ISBN 0-13-094444-0. (CS)
SINGH J. Semiconductor Devices. McGraw-Hill, 1994. ISBN-10 0071139060. (CS)
BOUŠEK J., KOSINA P., MOJROVÁ B. Elektronické součástky. FEKT VUT V BRNĚ, elektronické skriptum, BRNO 2015 (CS)
BOUŠEK J., KOSINA P., MOJROVÁ B. Elektronické součástky: sbírka příkladů. FEKT VUT V BRNĚ, elektronické skriptum, BRNO 2015. (CS)
BOUŠEK J., HORÁK M., Electronic Devices, FEKT VUT V BRNĚ, elektronické skriptum, BRNO 2006 (CS)
EMILIANO R. MARTINS , Essentials of Semiconductor Device Physics, Wiley 2022, ISBN: 978-1-119-88411-8 (CS)

Not applicable.

eLearning: currently opened course

13 hours, compulsory

eLearning: currently opened course