FEKT-BPC-ESOAcad. year: 2019/2020
Semiconductors physics. PN-junction. Semiconductor Diode. Bipolar junction transistors. Field effect transistors. Power electronic devices - thyristor, TRIAC, DIAC, IGBT transistor. Optoelectronic devices. Passive components.
Learning outcomes of the course unit
Based on the verification of the student's knowledge and skills in seminars, laboratory work and in the written exam, after completing the course the student is able to:
Describe in detail the mechanisms that affect the PN junction at steady state and in forward and reverse polarization.
Define the barrier and diffusion capacitance of the PN junction.
Define the meaning of Shockley ideal diode equation and discuss current-voltage-characteristics of diodes including the influence of technological parameters.
Explain the operation of PN junction in following circuits: Rectifier, voltage stabilizer, capacitance diode, photo-diode, light emitting diode (LED) and current controlled differential resistance.
Define and explain breakdown mechanisms of PN junction: Tunnel-breakdown, avalanche-breakdown, thermal- breakdown and surface- breakdown.
Describe the structure of the bipolar transistor and explain its operation.
Design and analyze class-A-amplifier and switch with bipolar transistor.
Explain the principles and application of linear and nonlinear models of bipolar transistor.
Apply simplified linear and non-linear transistor models for the design and analysis of class-A-amplifiers and bipolar transistor switches.
Describe the structure of unipolar transistors JFET and IGFET and explain their operation.
Design and analyze class-A-amplifier and switch with unipolar transistors JFET and IGFET.
Describe the structure of a thyristor and its equivalent circuit and explain its operation.
Describe the structure of the triac and explain its operation.
Explain the mechanism of switch-on-process of triac by means of positive and negative gate-current control.
Define the principle of phase-angel control of power switching devices.
Design and explain typical wiring-diagrams of thyristor and triac.
Describe the mechanisms of interaction of light with matter.
Define the differences between photometric and radiometric quantities.
Explain the mechanisms of photoluminescence and electroluminescence.
Describe the principles of different types of lasers and explain the benefits of their use.
Describe the design of the laser diode and define the conditions for its operation.
Explain the differences between the phototransistor and photodiode and describe their use.
Define parasitic properties of commonly used resistors and explain the impact of used materials and design to formation or suppression of these parasitic properties.
Define parasitic properties of commonly used capacitors and explain the impact of used materials and design to formation or suppression of these parasitic properties.
Define parasitic properties of commonly used inductors and explain the impact of used materials and design to formation or suppression of these parasitic properties.
The subject knowledge on the secondary school level is required.
Recommended optional programme components
Recommended or required reading
Singh J. : Semiconductor Devices ,McGraw-Hill (EN)
Boylestad R., Nashelsky L. :Electronic devices and Circuit Theory ,Prentice Hall (EN)
MUSIL V., BRZOBOHATÝ J., BOUŠEK J, PRCHALOVÁ I.: " Elektronické součástky", PC dir, BRNO, 1999 (CS)
Boušek J., Kosina P., Mojrova B.: Elektronické součástky, FEKT VUT V BRNĚ, elektronické skriptum
Boušek J., Kosina P., Mojrova B.: Elektronické součástky sbírka příkladů, FEKT VUT V BRNĚ, elektronické skriptum
Boušek J., Kosina P.: Elektronické součástky BESO, laboratorní cvičení, FEKT VUT V BRNĚ, elektronické skriptum
Planned learning activities and teaching methods
Teachning methods include mutually interlaced lectures, numerical exercises and practical laboratories in follow-up subjedct BESIOP. Course is taking advantage of e-learning (Moodle) system.
Assesment methods and criteria linked to learning outcomes
Numerical exercises, TEST 1 - 15 points; minimum 8 points.
Numerical exercises, TEST 2 - 15 points; point limit not set
Final exam - 70 points; minimum 35 points.
Language of instruction
1. Semiconductors physics. Band diagrams of semiconductors. Intrinsic semiconductors, p-type, n-type semiconductors. Concentration of charge carriers in semiconductors. Electrical conductivity of semiconductors. Diffusion of charge carriers. Generation and recombination of charge carriers in semiconductors.
2. PN-junction. PN-junction in equilibrium state, depletion layer, built-in voltage. Barrier and diffusion capacitance of PN junction. Band diagrams of PN junction. Current-voltage characteristics. Breakdown of PN junction. Other types of junctions. Junction metal-semiconductor.
3. Semiconductor Diode. Current-voltage characteristics. Diode as rectifier, reference voltage source, switch an current controlled differential resistance.
4. Semiconductor Diode. Varicap, varactor. Schottky diode. Tunnel diode. Photodiode. Structure PIN. PIN-photodiode. PIN-diode.
5 Semiconductor Diode. Technology of semiconductor diode. Typical cuircuits using semiconductor diode. Typical parameters of semiconductor diodes.
6. Bipolar junction transistor (BJT). Structure and principle of operation. Current-voltage characteristics of common emitter configuration. Operation modes (active normal, active inverse, saturation, closed).
7. Bipolar junction transistors (BJT): Linearized small-signal models of bipolar transistors, h-parameters, y-parameters. The first and the second breakdown of the transistor. The limits of transitor operation (safe operating area).
8. Bipolar junction transistors (BJT):Simple circuits with transistors. DC properties (operating point). Transistor as an amplifier in CE, CB, and CC configurations. Current gain , Voltage gain, Input and Output impedance. Transistor as a switch.
9. Field effect transistors JFET. MOSFET. Types of transistors: n-channel, p-channel, enhancement type, depletion type. Structure, principle of operation. Linear regime and saturation. Current-voltage characteristics. Transistor as a current source, voltage amplifier, switch and controlled resistance.
10. Field effect transistors. Linearized models. Structure CCD. FET as a memory cell. MESFET, structure, principle of operation. Power MOSFET, structures LDMOS, VDMOS a VVMOS. Parallel integration of FETs. Insulated Gate Bipolar Transistor (IGBT), structure, equivalent circuit, principle of operation.
11. Power electronic devices. Thyristor (Silicon-Controlled-Rectifier; SCR), structure, equivalent circuit, principle of operation. Reverse blocking mode, Forward blocking mode, Forward conduction mode. Current-voltage characteristics. Special thyristor types and their use. TRIAC, structure, principle of operation. DIAC, structure, examples of use. Principle of phase-angle control of switching devices.
12. Optoelectronic devices. Mechanisms of light emission. Interaction of radiation with solids. Photometric and radiometric quantities. Lasers. Laser diode. Photodiode , Phototransistor. Opto-coupler.
13. Passive components. Resistors, Capacitors, Inductors. Dependence of properties on materials and design configuration.
The knowledge about electronic devices acquirement.
Specification of controlled education, way of implementation and compensation for absences
Laboratory practicum. Numerical practicum.
Classification of course in study plans
- Programme BPC-MET Bachelor's, 1. year of study, summer semester, 4 credits, compulsory