Publication detail

Influence of Functional Resistors on Offset Voltage Noise in Thick-Film Pressure Sensors

SEDLÁKOVÁ, V. MAJZNER, J. SEDLÁK, P. HOLCMAN, V. ŠIKULA, J. SANTO-ZARNIK, M. BELAVIC, D. HROVAT, M.

Original Title

Influence of Functional Resistors on Offset Voltage Noise in Thick-Film Pressure Sensors

English Title

Influence of Functional Resistors on Offset Voltage Noise in Thick-Film Pressure Sensors

Type

conference paper

Language

en

Original Abstract

We are concentrating our effort on the investigation of Low-Temperature Co-fired Ceramic (LTCC)-based ceramic pressure sensors (CPSs) quality and reliability using the low frequency noise measurements. Special test specimens containing thick film resistors of different sizes including four thick-film resistors (0.8 x 0.8 mm2) connected in the Wheatstone bridge were made for the case study by using different thick-film materials and technology variants. In the present work we will discuss the correlation between the functional resistor parameters (resistance and layer thickness, respectively) and the noise level of single resistors, as well as the correlation between the bridge offset voltage fluctuation and the noise of single resistors within the bridge. For given sample geometry the sample resistance increases with decreasing thickness of the resistive layer. Thinner resistors have smaller volume of resistive layer which leads to the increase of 1/f noise component. The discussion how the noise of single resistors is transferred into the total noise of offset voltage on the bridge output is given.

English abstract

We are concentrating our effort on the investigation of Low-Temperature Co-fired Ceramic (LTCC)-based ceramic pressure sensors (CPSs) quality and reliability using the low frequency noise measurements. Special test specimens containing thick film resistors of different sizes including four thick-film resistors (0.8 x 0.8 mm2) connected in the Wheatstone bridge were made for the case study by using different thick-film materials and technology variants. In the present work we will discuss the correlation between the functional resistor parameters (resistance and layer thickness, respectively) and the noise level of single resistors, as well as the correlation between the bridge offset voltage fluctuation and the noise of single resistors within the bridge. For given sample geometry the sample resistance increases with decreasing thickness of the resistive layer. Thinner resistors have smaller volume of resistive layer which leads to the increase of 1/f noise component. The discussion how the noise of single resistors is transferred into the total noise of offset voltage on the bridge output is given.

Keywords

Low frequency noise, TFR, pressure sensor, quality, reliability

RIV year

2012

Released

19.09.2012

Publisher

MIDEM

Location

Slovinsko

ISBN

978-961-92933-2-4

Book

MIDEM Society for Microelectronic, Electronic Components and Materials - Conference 2012 Proceedings

Pages from

393

Pages to

398

Pages count

6

BibTex


@inproceedings{BUT95970,
  author="Vlasta {Sedláková} and Jiří {Majzner} and Petr {Sedlák} and Vladimír {Holcman} and Josef {Šikula} and Marina {Santo-Zarnik} and Darko {Belavic} and Marko {Hrovat}",
  title="Influence of Functional Resistors on Offset Voltage Noise in Thick-Film Pressure Sensors",
  annote="We are concentrating our effort on the investigation of Low-Temperature Co-fired Ceramic (LTCC)-based ceramic pressure sensors (CPSs) quality and reliability using the low frequency noise measurements. Special test specimens containing thick film resistors of different sizes including four thick-film resistors (0.8 x 0.8 mm2) connected in the Wheatstone bridge were made for the case study by using different thick-film materials and technology variants. In the present work we will discuss the correlation between the functional resistor parameters (resistance and layer thickness, respectively) and the noise level of single resistors, as well as the correlation between the bridge offset voltage fluctuation and the noise of single resistors within the bridge. For given sample geometry the sample resistance increases with decreasing thickness of the resistive layer. Thinner resistors have smaller volume of resistive layer which leads to the increase of 1/f noise component. The discussion how the noise of single resistors is transferred into the total noise of offset voltage on the bridge output is given.",
  address="MIDEM",
  booktitle="MIDEM Society for Microelectronic, Electronic Components and Materials - Conference 2012 Proceedings",
  chapter="95970",
  howpublished="print",
  institution="MIDEM",
  year="2012",
  month="september",
  pages="393--398",
  publisher="MIDEM",
  type="conference paper"
}