Publication detail

Local optical imaging of electronic characteristics in semiconductors

TOMÁNEK, P., BENEŠOVÁ, M., OTEVŘELOVÁ, D., GRMELA, L., DOBIS, P.

Original Title

Local optical imaging of electronic characteristics in semiconductors

Czech Title

Lokální optické zobrazení eletronických charakteristik polovodičů

English Title

Local optical imaging of electronic characteristics in semiconductors

Type

conference paper

Language

en

Original Abstract

The continuous trend towards miniaturization of devices brings a new challenge for semiconductor studies: the demand for local rather than average material characterization. We report on optical imaging with superresolution in two different cases, which show the possibility of the Scanning Near-field Optical Microscopy (SNOM): dynamics of excess carriers in silicon and optically induced photocurrent in semiconductor structure The images locate defects, reveal variations, and also can map the regions in which a recombination process is active. Quantitative mapping of the excess carrier lifetime at sub-wavelength resolution better than 250 nm is now possible. Such measurements will give new insights into carrier transport and recombination processes in all types of semiconductors. On the other side, the comparative study of spatially resolved near-field photocurrent (NPC) spectra for high power laser diode arrays with double quantum well before and after degradation due to the aging process is presented. Near-field optical microscope operating in the illumination mode is employed and subwavelength spatial resolution of the PC spectra is established. The nondestructive quality of this method is a particularly attractive for in-situ analysis of laser structures.

Czech abstract

The continuous trend towards miniaturization of devices brings a new challenge for semiconductor studies: the demand for local rather than average material characterization. We report on optical imaging with superresolution in two different cases, which show the possibility of the Scanning Near-field Optical Microscopy (SNOM): dynamics of excess carriers in silicon and optically induced photocurrent in semiconductor structure The images locate defects, reveal variations, and also can map the regions in which a recombination process is active. Quantitative mapping of the excess carrier lifetime at sub-wavelength resolution better than 250 nm is now possible. Such measurements will give new insights into carrier transport and recombination processes in all types of semiconductors. On the other side, the comparative study of spatially resolved near-field photocurrent (NPC) spectra for high power laser diode arrays with double quantum well before and after degradation due to the aging process is presented. Near-field optical microscope operating in the illumination mode is employed and subwavelength spatial resolution of the PC spectra is established. The nondestructive quality of this method is a particularly attractive for in-situ analysis of laser structures

English abstract

The continuous trend towards miniaturization of devices brings a new challenge for semiconductor studies: the demand for local rather than average material characterization. We report on optical imaging with superresolution in two different cases, which show the possibility of the Scanning Near-field Optical Microscopy (SNOM): dynamics of excess carriers in silicon and optically induced photocurrent in semiconductor structure The images locate defects, reveal variations, and also can map the regions in which a recombination process is active. Quantitative mapping of the excess carrier lifetime at sub-wavelength resolution better than 250 nm is now possible. Such measurements will give new insights into carrier transport and recombination processes in all types of semiconductors. On the other side, the comparative study of spatially resolved near-field photocurrent (NPC) spectra for high power laser diode arrays with double quantum well before and after degradation due to the aging process is presented. Near-field optical microscope operating in the illumination mode is employed and subwavelength spatial resolution of the PC spectra is established. The nondestructive quality of this method is a particularly attractive for in-situ analysis of laser structures.

Keywords

semiconductor, nanostructure, measurement, local characteristics

RIV year

2003

Released

18.08.2003

Location

Brno

ISBN

80-239-1005-1

Book

Noise and fluctuation ICNF 2003

Pages from

445

Pages to

448

Pages count

4

BibTex


@inproceedings{BUT7888,
  author="Pavel {Tománek} and Markéta {Benešová} and Dana {Otevřelová} and Lubomír {Grmela} and Pavel {Dobis}",
  title="Local optical imaging of electronic characteristics in semiconductors",
  annote="The continuous trend towards miniaturization of devices brings a new challenge for semiconductor studies: the demand for local rather than average material characterization. We report on optical imaging with superresolution in two different cases, which show the possibility of the Scanning Near-field Optical Microscopy (SNOM): dynamics of excess carriers in silicon and optically induced photocurrent in semiconductor structure The images locate defects, reveal variations, and also can map the regions in which a recombination process is active. Quantitative mapping of the excess carrier lifetime at sub-wavelength resolution better than 250 nm is now possible. Such measurements will give new insights into carrier transport and recombination processes in all types of semiconductors. On the other side, the comparative study of spatially resolved near-field photocurrent (NPC) spectra for high power laser diode arrays with double quantum well before and after degradation due to the aging process is presented. Near-field optical microscope operating in the illumination mode is employed and subwavelength spatial resolution of the PC spectra is established. The nondestructive quality of this method is a particularly attractive for in-situ analysis of laser structures.",
  booktitle="Noise and fluctuation ICNF 2003",
  chapter="7888",
  year="2003",
  month="august",
  pages="445",
  type="conference paper"
}