Publication detail

Using of AFM for investigation of high-resistance aluminum nitride films

SAFARALIEV, G. KARDASHOVA, G. SOBOLA, D. MAGAMEDOVA, E.

Original Title

Using of AFM for investigation of high-resistance aluminum nitride films

English Title

Using of AFM for investigation of high-resistance aluminum nitride films

Type

conference paper

Language

Russian

Original Abstract

This paper describes the method and methodics for the study of high-resistans aluminum nitride film by atomic force microscopy. The main features of these measurements are shown.

English abstract

This paper describes the method and methodics for the study of high-resistans aluminum nitride film by atomic force microscopy. The main features of these measurements are shown.

Keywords

noncontact atomic force microscopy, cantilever, scanner, resistance, thin film

Key words in English

noncontact atomic force microscopy, cantilever, scanner, resistance, thin film

Authors

SAFARALIEV, G.; KARDASHOVA, G.; SOBOLA, D.; MAGAMEDOVA, E.

Released

26. 11. 2010

Publisher

Energoatomizdat

Location

Moscow

ISBN

978-5-283-00867-7

Book

Fundamental problems of Radioengineering and Device Construction

Pages from

219

Pages to

221

Pages count

3

BibTex

@inproceedings{BUT76207,
  author="Gadjimet {Safaraliev} and Gulnara {Kardashova} and Dinara {Sobola} and Egana {Magamedova}",
  title="Using of AFM for investigation of high-resistance aluminum nitride films",
  booktitle="Fundamental problems of Radioengineering and Device Construction",
  year="2010",
  number="0",
  pages="219--221",
  publisher="Energoatomizdat",
  address="Moscow",
  isbn="978-5-283-00867-7"
}