Publication detail

Features of AlN thin films formation by ion-plasma methods

BILALOV, B. GITIKCHIEV, M. SOBOLA, D. TAIROV, I.

Original Title

Features of AlN thin films formation by ion-plasma methods

English Title

Features of AlN thin films formation by ion-plasma methods

Type

conference paper

Language

Russian

Original Abstract

This study investigates the physic-technological bases of low-temperature formation of aluminum nitride (AlN) layers on sapphire substrates (Al2O3) by using of ion processes it the single cycle of integrated ion-etching in order to obtain matching intermediate layer by surface nitration of sapphire substrates.

English abstract

This study investigates the physic-technological bases of low-temperature formation of aluminum nitride (AlN) layers on sapphire substrates (Al2O3) by using of ion processes it the single cycle of integrated ion-etching in order to obtain matching intermediate layer by surface nitration of sapphire substrates.

Keywords

magnetron sputtering, substrate, target, ion etching

Key words in English

magnetron sputtering, substrate, target, ion etching

Authors

BILALOV, B.; GITIKCHIEV, M.; SOBOLA, D.; TAIROV, I.

Released

22. 10. 2010

Publisher

Univerzita Stavropol

Location

Ruska Federace, Stavropol

ISBN

5-9296-0157-7

Book

Chemistry of solid state: nanomaterials, nanotechnology. X Anniversary International scientific conference

Pages from

243

Pages to

245

Pages count

3

BibTex

@inproceedings{BUT75849,
  author="Bilal {Bilalov} and Magomed {Gitikchiev} and Dinara {Sobola} and Islam {Tairov}",
  title="Features of AlN thin films formation by ion-plasma methods",
  booktitle="Chemistry of solid state: nanomaterials, nanotechnology. X Anniversary International scientific conference",
  year="2010",
  pages="243--245",
  publisher="Univerzita Stavropol",
  address="Ruska Federace, Stavropol",
  isbn="5-9296-0157-7"
}