Publication detail

Near-field optical imaging of carrier dynamics in silicon with superresolution

TOMÁNEK, P., BENEŠOVÁ, M., DOBIS, P., OTEVŘELOVÁ, D., GRMELA, L., KAWATA, S.

Original Title

Near-field optical imaging of carrier dynamics in silicon with superresolution

Czech Title

Zobrazení dynamiky náboje v křemíku pomocí optického blízkého pole se superrozlišením

English Title

Near-field optical imaging of carrier dynamics in silicon with superresolution

Type

conference paper

Language

en

Original Abstract

The lifetime of excess carriers created by illumination of a semiconductor with a visible light is modified by the presence of defects, which may occur under or in the surface. The system detects the excess carries with an infrared (IR) light. Due to the free carrier absorption as a dominant carrier interaction for used IR wavelength, the IR signal is decreased by the presence of excess carriers. The time-dependence of the IR signal variation is characteristic of the excess carrier lifetime. Characteristic rate variations of carrier processes in silicon are imaged using near field scanning optical microscopy (NSOM) with high (<100 nm) spatial resolution. Moreover, the images can locate defects, reveal variations, and map the regions in which a recombination process is active.

Czech abstract

Doba života volných nábojů vzniklých osvětlením polovodiče viditelným světlem se mění v přítomnosti defektů, k čemuž může dojít na povrchu nebo těsně pod ním. Systém detekuje tyto náboje pomocí IČ světla. V důsledku absorbce volných nábojů jako hlavní interakce nábojů klesá IČ signál nadbytečného náboje. Charakteristické změny doby života nábojů v křemíku jsou zviditelněny pomocí SNOM s vysokým rozlišením. Navíc je možné lokalizovat defekty a mapovat oblasti aktivního rekombinačního procesu.

English abstract

The lifetime of excess carriers created by illumination of a semiconductor with a visible light is modified by the presence of defects, which may occur under or in the surface. The system detects the excess carries with an infrared (IR) light. Due to the free carrier absorption as a dominant carrier interaction for used IR wavelength, the IR signal is decreased by the presence of excess carriers. The time-dependence of the IR signal variation is characteristic of the excess carrier lifetime. Characteristic rate variations of carrier processes in silicon are imaged using near field scanning optical microscopy (NSOM) with high (<100 nm) spatial resolution. Moreover, the images can locate defects, reveal variations, and map the regions in which a recombination process is active.

Keywords

near-field optics, optical imaging, superresolution, semiconductor, silicon, lifetime, carrier dynamics

RIV year

2003

Released

02.03.2003

Publisher

Institute for Physics of microstructures RAS

Location

Nizhniy Novgorod, Russia

Pages from

63

Pages to

65

Pages count

3

BibTex


@inproceedings{BUT7380,
  author="Pavel {Tománek} and Markéta {Benešová} and Pavel {Dobis} and Dana {Otevřelová} and Lubomír {Grmela} and Satoshi {Kawata}",
  title="Near-field optical imaging of carrier dynamics in silicon with superresolution",
  annote="The lifetime of excess carriers created by illumination of a semiconductor with a visible light is modified by the presence of defects, which may occur under or in the surface. The system detects the excess carries with an infrared (IR) light. Due to the free carrier absorption as a dominant carrier interaction for used IR wavelength, the IR signal is decreased by the presence of excess carriers. The time-dependence of the IR signal variation is characteristic of the excess carrier lifetime. Characteristic rate variations of carrier processes in silicon are imaged using near field scanning optical microscopy (NSOM) with high (<100 nm) spatial resolution. Moreover, the images can locate defects, reveal variations, and map the regions in which a recombination process is active.",
  address="Institute for Physics of microstructures RAS",
  booktitle="Scanning Probe Microscopy - 2003",
  chapter="7380",
  howpublished="print",
  institution="Institute for Physics of microstructures RAS",
  year="2003",
  month="march",
  pages="63--65",
  publisher="Institute for Physics of microstructures RAS",
  type="conference paper"
}