Publication detail

Influence of laser cutting on p-n junction behavior of solar cell

ŠKARVADA, P. TOMÁNEK, P. GRMELA, L.

Original Title

Influence of laser cutting on p-n junction behavior of solar cell

Czech Title

Vliv laserového opracování na chování p-n přechodu v solárním článku

English Title

Influence of laser cutting on p-n junction behavior of solar cell

Type

journal article

Language

en

Original Abstract

We present the results of far-field nanoscopic investigation on the sub-micrometer localization and characterization of defects in optoelectronic devices (e.g. monocrystalline silicon solar cell structure) due to the material processing. Solar cells are generally prepared from Si-ingots sawed into thin round wafers by metallic wire. Hence, first defects appear on the sites of metallic precipitates, which reduce quantum efficiency of cells. Second type of defects then originates from further fitting of the round wafer into square cells. The latter can be dimensioning by mechanical sawing or breaking, laser opening or water jet stream cutting. Laser opening, as one of new processing techniques which could diminish the losses in the cells, is a promising tool but not yet well developed. Therefore this paper brings first results of preliminary study concerning the influence of laser cutting on the behavior of semiconductor p-n junction.

Czech abstract

V práci jsou prezentovány výsledky nanoskopického zkoumání v optickém vzdáleném poli submikrometrické lokalizace a charakterizace defektů optoelektronických součástek, které vznikly v důsledku opracování materiálu. Solární články jsou většinou vyrobeny z křemíkovývh ingotů, nařezaných na tenké plátky pomocí kovového drátu. Tedy první defekty se objeví na kovových příměsí, které snižují kvantovou účinnost solárního článku. další typ defektů vzniká při řezání kruhových waferů na čtverce. Ty mohou pocházet z různých způsobů opracování - mechanické řezání, lámaní, laserové pasivace nebo řezání vodním svazkem. Laserové opracování může snižovat ztráty na hranách článků, ale zatím ještě není příliš používané. Proto článek přináší prvotní výsledky popisující vliv laserového řezání na chování polovodičového p-n přechodu.

English abstract

We present the results of far-field nanoscopic investigation on the sub-micrometer localization and characterization of defects in optoelectronic devices (e.g. monocrystalline silicon solar cell structure) due to the material processing. Solar cells are generally prepared from Si-ingots sawed into thin round wafers by metallic wire. Hence, first defects appear on the sites of metallic precipitates, which reduce quantum efficiency of cells. Second type of defects then originates from further fitting of the round wafer into square cells. The latter can be dimensioning by mechanical sawing or breaking, laser opening or water jet stream cutting. Laser opening, as one of new processing techniques which could diminish the losses in the cells, is a promising tool but not yet well developed. Therefore this paper brings first results of preliminary study concerning the influence of laser cutting on the behavior of semiconductor p-n junction.

Keywords

pn junction, laser cutting, solar cell, efficiency

RIV year

2011

Released

11.09.2011

Publisher

VDI Verlag

Location

Düsseldorf

Pages from

291

Pages to

296

Pages count

6

BibTex


@article{BUT73230,
  author="Pavel {Škarvada} and Pavel {Tománek} and Lubomír {Grmela}",
  title="Influence of laser cutting on p-n junction behavior of solar cell",
  annote="We present the results of far-field nanoscopic investigation on the sub-micrometer localization and characterization of defects in optoelectronic devices (e.g. monocrystalline silicon solar cell structure) due to the material processing.  Solar cells are generally prepared from Si-ingots sawed into thin round wafers by metallic wire. Hence, first defects appear on the sites of metallic precipitates, which reduce quantum efficiency of cells. Second type of defects then originates from further fitting of the round wafer into square cells. The latter can be dimensioning by mechanical sawing or breaking, laser opening or water jet stream cutting. Laser opening, as one of new processing techniques which could diminish the losses in the cells, is a promising tool but not yet well developed. Therefore this paper brings first results of preliminary study concerning the influence of laser cutting on the behavior of semiconductor p-n junction.",
  address="VDI Verlag",
  chapter="73230",
  institution="VDI Verlag",
  number="2156",
  volume="2156",
  year="2011",
  month="september",
  pages="291--296",
  publisher="VDI Verlag",
  type="journal article"
}